| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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19,020 pcs
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19020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Nexperia PMV88ENEAR is an N-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It offers a drain-source voltage of 60V and a continuous drain current of 2.2A at 25°C ambient temperature. The device is designed for logic-level compatibility and features an extended operating temperature range up to 175°C.
The MOSFET is supplied in a small SOT23 (TO-236AB) surface-mounted device plastic package. Its key electrical characteristics include a low drain-source on-state resistance of 117mΩ maximum at 2.2A and 10V VGS, and a gate threshold voltage of 2.7V maximum at 250µA. It also provides ElectroStatic Discharge (ESD) protection exceeding 2 kV HBM.
Applications for this MOSFET include relay drivers, high-speed line drivers, low-side load switches, and general switching circuits. Its AEC-Q101 qualification makes it suitable for demanding automotive and industrial environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage of the PMV88ENEAR MOSFET is 60 V.
The PMV88ENEAR MOSFET is supplied in a TO-236-3, SC-59, SOT-23-3 package.
The operating temperature range for the PMV88ENEAR MOSFET is -55°C to 175°C.
The PMV88ENEAR MOSFET is RoHS3 Compliant.
The maximum continuous drain current for the PMV88ENEAR is 2.2 A.
The on-state resistance of the PMV88ENEAR at 2.2A and 10V VGS is a maximum of 117 mΩ.
Yes, the PMV88ENEAR has ElectroStatic Discharge (ESD) protection greater than 2 kV HBM.