PMV65XPER The Nexperia USA Inc. PMV65XPER is a P-channel Trench MOSFET designed for switching applications. It offers a 20V drain-source voltage and a 2.8A drain current.
Mfr Part #:

PMV65XPER

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia USA Inc. PMV65XPER is a P-channel Trench MOSFET designed for switching applications. It offers a 20V drain-source voltage and a 2.8A drain current.
✓ Total Stock: 1,058 pcs
$ Price Range: $2.27

PMV65XPER Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,058 pcs
1058 pcs On Request 1 On Request On Request On Request On Request On Request

PMV65XPER Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

PMV65XPER Description

Short technical summary and product information.

The Nexperia USA Inc. PMV65XPER is a P-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in a compact SOT23 (TO-236AB) surface-mounted device plastic package.

 

This MOSFET features a drain-source voltage of 20V and a continuous drain current of 2.8A at 25°C ambient temperature. The on-state resistance (Rds On) is a maximum of 78mΩ at 2.8A and 4.5V gate-source voltage. It also offers a gate-source voltage range of ±12V and a gate charge of 9nC at 4.5V.

 

With enhanced power dissipation capabilities, the PMV65XPER has a maximum power dissipation of 480mW at 25°C ambient temperature and 6.25W at 25°C case temperature. It operates within a junction temperature range of -55°C to 150°C.

 

Applications for this MOSFET include relay drivers, high-speed line drivers, high-side load switches, and general switching circuits. Its small SOT23 package makes it suitable for space-constrained designs.

PMV65XPER Quick Information

Product Type: MOSFET
Canonical Name: P-Channel Trench MOSFET
Subcategory: P-Channel

PMV65XPER Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PMV65XPER Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMV65XPER Features

  • P-channel Trench MOSFET technology.
  • 20V drain-source voltage rating.
  • 2.8A continuous drain current.
  • Low Rds On of 78mOhm.
  • Compact SOT-23 package.

PMV65XPER Applications

  • Suitable for relay driver circuits.
  • Used in high-speed line drivers.
  • Ideal for high-side load switches.
  • Applicable for general switching circuits.

PMV65XPER FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the PMV65XPER MOSFET?

The drain-source voltage (Vds) for the PMV65XPER is 20V.

What is the maximum continuous drain current of the PMV65XPER?

The maximum continuous drain current (Id) for the PMV65XPER is 2.8A at 25°C ambient temperature.

What is the on-state resistance (Rds On) of the PMV65XPER?

The Rds On is a maximum of 78mΩ at 2.8A drain current and 4.5V gate-source voltage.

What package type is the PMV65XPER MOSFET supplied in?

The PMV65XPER is supplied in a TO-236AB (SOT23) surface-mount package.

What is the operating temperature range for the PMV65XPER?

The operating temperature range for the PMV65XPER is -55°C to 150°C.

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