| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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15,000 pcs
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15000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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This Nexperia PMV65UNER is an N-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in a compact SOT23 (TO-236AB) surface-mounted plastic package.
The MOSFET offers a drain-source voltage of 20V and a continuous drain current of 2.8A at 25°C ambient temperature. Its low threshold voltage and enhanced power dissipation capability make it suitable for various applications.
Key electrical characteristics include a maximum drain-source on-state resistance of 73mOhm at 2.8A and 4.5V Vgs. The device also features ElectroStatic Discharge (ESD) protection exceeding 2kV HBM.
Designed for applications such as LED drivers, power management, low-side load switches, and general switching circuits, this MOSFET is mounted on a surface mount package (TO-236-3, SC-59, SOT-23-3). It operates within a temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 20V.
The maximum continuous drain current is 2.8A at 25°C ambient temperature.
The Rds On resistance is a maximum of 73mOhm at 2.8A and 4.5V Vgs.
The operating temperature range is -55°C to 150°C (TJ).
It is available in a TO-236-3, SC-59, SOT-23-3 package, also known as TO-236AB.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.