PMV55ENEAR The Nexperia PMV55ENEAR is an N-channel Trench MOSFET designed for various switching applications. It features a 60V drain-source voltage and a 3.1A drain current.
Mfr Part #:

PMV55ENEAR

Available from 2 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PMV55ENEAR is an N-channel Trench MOSFET designed for various switching applications. It features a 60V drain-source voltage and a 3.1A drain current.
✓ Total Stock: 82,120 pcs
$ Price Range: $2.27

PMV55ENEAR Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
82,020 pcs
82020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
100 pcs
100 pcs On Request 1 On Request On Request On Request On Request On Request

PMV55ENEAR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

PMV55ENEAR Description

Short technical summary and product information.

The Nexperia PMV55ENEAR is an N-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in a compact SOT23 (TO-236AB) surface-mounted device plastic package.

 

Key electrical characteristics include a maximum drain-source voltage of 60V and a continuous drain current of 3.1A at 25°C ambient temperature. The device offers a low drain-source on-state resistance of 60mΩ maximum at 3.1A and 10V gate-source voltage. It is logic level compatible and features very fast switching capabilities.

 

This MOSFET is suitable for applications such as relay drivers, high-speed line drivers, low-side load switches, and general switching circuits. It is AEC-Q101 qualified and provides ElectroStatic Discharge (ESD) protection greater than 2 kV HBM.

 

The surface mount TO-236AB package is ideal for space-constrained designs. The operating temperature range is -55°C to 150°C (TJ).

PMV55ENEAR Quick Information

Product Type: MOSFET
Canonical Name: N-Channel Trench MOSFET
Subcategory: N-Channel

PMV55ENEAR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PMV55ENEAR Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMV55ENEAR Features

  • 60V N-channel Trench MOSFET.
  • 3.1A continuous drain current.
  • Low 60mOhm Rds On.
  • Logic level compatible.
  • AEC-Q101 qualified.

PMV55ENEAR Applications

  • Used as a relay driver.
  • Suitable for line driver circuits.
  • Ideal for low-side load switches.
  • Applicable in switching circuits.

PMV55ENEAR FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the PMV55ENEAR?

The drain-source voltage is 60 V.

What is the maximum gate-source voltage for the PMV55ENEAR?

The maximum gate-source voltage is ±20V.

What is the continuous drain current of the PMV55ENEAR?

The continuous drain current is 3.1 A.

What is the Rds On for the PMV55ENEAR?

The Rds On is a maximum of 60mΩ at 3.1A and 10V.

What is the package type for the PMV55ENEAR?

The package is TO-236-3, SC-59, SOT-23-3.

What is the operating temperature range for the PMV55ENEAR?

The operating temperature range is -55°C to 150°C (TJ).

Does the PMV55ENEAR have ESD protection?

Yes, it has ElectroStatic Discharge (ESD) protection greater than 2 kV HBM.

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