PMV50XPR The Nexperia PMV50XPR is a P-channel Trench MOSFET designed for switching applications. It offers a 20V drain-source voltage and 3.6A continuous drain current.
Mfr Part #:

PMV50XPR

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PMV50XPR is a P-channel Trench MOSFET designed for switching applications. It offers a 20V drain-source voltage and 3.6A continuous drain current.
✓ Total Stock: 37,020 pcs
$ Price Range: $2.27

PMV50XPR Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
37,020 pcs
37020 pcs On Request 1 On Request On Request On Request On Request On Request

PMV50XPR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

PMV50XPR Description

Short technical summary and product information.

The Nexperia PMV50XPR is a P-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in a compact SOT23 (TO-236AB) surface-mounted plastic package.

 

Key electrical specifications include a drain-source voltage of 20V and a continuous drain current of 3.6A at 25°C ambient temperature. The on-state resistance (RdsOn) is a maximum of 60mOhm at 3.6A drain current and 4.5V gate-source voltage. It features a low threshold voltage and low on-state resistance, contributing to enhanced power dissipation capability.

 

This MOSFET is suitable for applications such as relay drivers, high-speed line drivers, high-side load switches, and general switching circuits. The device operates within a temperature range of -55°C to 150°C (TJ) and is available in a TO-236AB package, suitable for surface mounting.

 

With its Trench MOSFET technology, the PMV50XPR offers improved performance characteristics for power management and switching tasks in various electronic designs.

PMV50XPR Quick Information

Product Type: MOSFET Transistor
Canonical Name: PMV50XPR P-Channel Trench MOSFET
Subcategory: P-Channel

PMV50XPR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PMV50XPR Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMV50XPR Features

  • P-channel Trench MOSFET technology.
  • 20V drain-source voltage rating.
  • 3.6A continuous drain current.
  • 60mOhm maximum on-state resistance.
  • SOT-23 surface-mount package.

PMV50XPR Applications

  • Suitable for relay driver circuits.
  • Used in high-speed line drivers.
  • Ideal for high-side load switches.
  • Applicable for general switching circuits.

PMV50XPR FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the PMV50XPR?

The drain-source voltage (Vds) for the PMV50XPR is 20V.

What is the maximum continuous drain current of the PMV50XPR?

The maximum continuous drain current (Id) for the PMV50XPR is 3.6A at 25°C ambient temperature.

What is the on-state resistance (RdsOn) of the PMV50XPR?

The RdsOn is a maximum of 60mOhm at 3.6A drain current and 4.5V gate-source voltage.

What package type is the PMV50XPR supplied in?

The PMV50XPR is supplied in a TO-236AB (SOT-23) surface-mount package.

What is the operating temperature range for the PMV50XPR?

The operating temperature range for the PMV50XPR is -55°C to 150°C (TJ).

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