PMV50ENEAR The Nexperia PMV50ENEAR is an N-channel Trench MOSFET designed for various switching applications. It offers a 30V drain-source voltage and a continuous drain current of 3.9A.
Mfr Part #:

PMV50ENEAR

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PMV50ENEAR is an N-channel Trench MOSFET designed for various switching applications. It offers a 30V drain-source voltage and a continuous drain current of 3.9A.
✓ Total Stock: 181,020 pcs
$ Price Range: $2.27

PMV50ENEAR Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
181,020 pcs
181020 pcs On Request 1 On Request On Request On Request On Request On Request

PMV50ENEAR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

PMV50ENEAR Description

Short technical summary and product information.

The Nexperia PMV50ENEAR is an N-channel enhancement mode MOSFET utilizing Trench MOSFET technology. It is designed for applications requiring fast switching and logic-level compatibility.

 

Key electrical characteristics include a maximum drain-source voltage of 30V and a continuous drain current of 3.9A at 25°C ambient temperature. The on-state resistance (Rds On) is a maximum of 43mOhm at 3.9A and 10V gate-source voltage, with a typical value of 30mOhm under the same conditions. The gate charge (Qg) is 10nC at 10V gate-source voltage.

 

This MOSFET operates within a temperature range of -55°C to 150°C. It features ElectroStatic Discharge (ESD) protection exceeding 2 kV HBM and is AEC-Q101 qualified.

 

The device is housed in a compact TO-236AB (SOT-23) surface-mount package, making it suitable for space-constrained designs. Applications include relay drivers, high-speed line drivers, and low-side load switches.

PMV50ENEAR Quick Information

Product Type: MOSFET
Canonical Name: N-Channel Trench MOSFET
Subcategory: N-Channel

PMV50ENEAR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PMV50ENEAR Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMV50ENEAR Features

  • N-channel Trench MOSFET technology.
  • 30V drain-source breakdown voltage.
  • 3.9A continuous drain current.
  • Low Rds On, maximum 43mOhm.
  • AEC-Q101 qualified for reliability.

PMV50ENEAR Applications

  • Suitable for relay driver circuits.
  • Ideal for high-speed line drivers.
  • Used in low-side loadswitch applications.
  • Effective in general switching circuits.

PMV50ENEAR FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the PMV50ENEAR?

The maximum drain-source voltage for the PMV50ENEAR is 30V.

What is the continuous drain current of the PMV50ENEAR?

The continuous drain current is 3.9A at 25°C ambient temperature.

What is the maximum Rds On for the PMV50ENEAR?

The maximum Rds On is 43mOhm at 3.9A drain current and 10V gate-source voltage.

What package type is the PMV50ENEAR supplied in?

The PMV50ENEAR is supplied in a TO-236AB (SOT-23) surface-mount package.

What is the operating temperature range for the PMV50ENEAR?

The operating temperature range is -55°C to 150°C.

Is the PMV50ENEAR AEC-Q101 qualified?

Yes, the PMV50ENEAR is AEC-Q101 qualified.

Home
Account

Categories