| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PMV48XPAR is a P-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in a compact SOT23 (TO-236AB) surface-mounted device plastic package.
Key electrical characteristics include a drain-source voltage of 20V, a continuous drain current of 3.5A at 25°C ambient temperature, and a maximum on-state resistance of 55mΩ at 2.4A and 4.5V gate-source voltage. The device supports logic-level gate drive, making it suitable for various applications.
This MOSFET is AEC-Q101 qualified, indicating its suitability for automotive and high-reliability applications. It features very fast switching speeds and is designed for use in circuits such as high-side load switches, high-speed line drivers, relay drivers, and general switching circuits.
The operating temperature range is from -55°C to 150°C (junction temperature). The package is a TO-236AB (SOT23) with surface mounting type.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-20 V
±12 V
3.5A
55 mΩ
-55°C to 150°C
TO-236-3, SC-59, SOT-23-3
Yes, RoHS3 Compliant