| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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30,000 pcs
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30000 pcs | On Request | 1 | On Request | On Request | 21+20+ | On Request | On Request | |
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1,500 pcs
|
1500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,137 pcs
|
1137 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Nexperia PMV40UN2 is an N-channel enhancement mode Trench MOSFET designed for various applications including LED drivers, power management, and switching circuits. It offers a maximum drain-source voltage of 30V and a continuous drain current of up to 4.4A.
The MOSFET features Trench MOSFET technology, low threshold voltage, and very fast switching capabilities. The drain-source on-state resistance is a maximum of 44mΩ at a gate-source voltage of 4.5V and a drain current of 3.7A. The device has an enhanced power dissipation capability of 1000 mW.
Packaged in a small SOT-23 (TO-236AB) surface-mounted device plastic package, the PMV40UN2 is suitable for space-constrained designs. It operates within a wide temperature range from -55°C to 150°C.
Key electrical characteristics include a maximum drain-source voltage of 30V and a maximum continuous drain current of 4.4A. The typical gate charge is 7nC, and the maximum power dissipation is rated at 5W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The maximum continuous drain current is 4.4A.
The maximum drain-source on-state resistance is 44mΩ.
The PMV40UN2 is supplied in a SOT-23 (TO-236AB) package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.