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97,020 pcs
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97020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Nexperia PMV213SN,215 is an N-channel enhancement mode field-effect transistor utilizing TrenchMOS technology. It is housed in a small surface mount package, specifically the TO-236AB (SOT-23-3) package.
Key electrical specifications include a drain-source voltage of 100V and a continuous drain current of up to 1.9A at 25°C. The on-state resistance (RdsOn) is a maximum of 250mΩ at 500mA and 10V gate-source voltage. The gate-source voltage has a maximum rating of ±30V.
With a total power dissipation of 2W at 25°C (soldered point temperature) and an operating temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for applications such as DC-to-DC primary side switching. The device features a low on-state resistance in a small surface mount package.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100V.
The maximum continuous drain current is 1.9A at 25°C.
The maximum on-state resistance is 250mΩ at 500mA and 10V.
This MOSFET is supplied in a TO-236-3, SC-59, SOT-23-3 package.
The operating temperature range is -55°C to 150°C (TJ).