| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
37,020 pcs
|
37020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
30,000 pcs
|
30000 pcs | On Request | 1 | On Request | On Request | 25+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This P-channel enhancement mode Field-Effect Transistor (FET) from Nexperia utilizes Trench MOSFET technology in a compact SOT23 (TO-236AB) package. It is rated for a 20V drain-source voltage and a continuous drain current of 1.2A at 25°C ambient temperature.
Key electrical characteristics include a low RdsOn of 210mOhm maximum at 1.2A and 4.5V Vgs, and a 1.8V rated RdsOn. The device features fast switching speeds and operates over a wide temperature range from -55°C to 150°C.
Suitable for applications such as relay drivers, high-speed line drivers, high-side load switches, and general switching circuits, the PMV160UP is available in a surface-mount SOT-23 package. Its robust design and efficient performance make it a reliable choice for various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 20V.
The continuous drain current is 1.2A at 25°C ambient temperature.
The Rds On is a maximum of 210mOhm at 1.2A drain current and 4.5V gate-source voltage.
The operating temperature range is -55°C to 150°C.
The PMV160UP is in a SOT-23 (TO-236AB) package.