PMV100EPAR The Nexperia PMV100EPAR is a P-channel Trench MOSFET designed for switching applications. It offers a 60V drain-source voltage and a 2.2A continuous drain current.
Mfr Part #:

PMV100EPAR

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PMV100EPAR is a P-channel Trench MOSFET designed for switching applications. It offers a 60V drain-source voltage and a 2.2A continuous drain current.
✓ Total Stock: 154,020 pcs
$ Price Range: $2.27

PMV100EPAR Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
154,020 pcs
154020 pcs On Request 1 On Request On Request On Request On Request On Request

PMV100EPAR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

PMV100EPAR Description

Short technical summary and product information.

The Nexperia PMV100EPAR is a P-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in a compact SOT23 (TO-236AB) surface-mounted device package.

 

This MOSFET features a drain-source voltage rating of 60V and a continuous drain current capability of 2.2A at 25°C ambient temperature. The drain-source on-state resistance (RDSon) is a maximum of 130mOhm at 2.2A and 10V gate-source voltage. It operates within an extended temperature range from -55°C to 175°C.

 

Key electrical characteristics include a gate-source voltage range of ±20V and an input capacitance of 616pF at 30V. The gate charge is a maximum of 17nC at 10V.

 

Applications for the PMV100EPAR include relay drivers, high-speed line drivers, high-side load switches, and general switching circuits. Its AEC-Q101 qualification makes it suitable for demanding environments.

PMV100EPAR Quick Information

Product Type: MOSFET
Canonical Name: PMV100EPA P-Channel Trench MOSFET
Subcategory: P-Channel

PMV100EPAR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PMV100EPAR Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMV100EPAR Features

  • P-channel Trench MOSFET technology.
  • 60V drain-source voltage rating.
  • 2.2A continuous drain current.
  • 130mOhm maximum RdsOn.
  • Extended temperature range to 175°C.

PMV100EPAR Applications

  • Suitable for relay driver applications.
  • Used as a high-speed line driver.
  • Ideal for high-side load switching.
  • Effective in general switching circuits.

PMV100EPAR FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the PMV100EPAR?

The maximum drain-source voltage (VDS) for the PMV100EPAR is 60V.

What is the continuous drain current rating of the PMV100EPAR?

The continuous drain current (ID) for the PMV100EPAR is 2.2A at 25°C ambient temperature.

What is the maximum RdsOn for the PMV100EPAR?

The maximum drain-source on-state resistance (RDSon) for the PMV100EPAR is 130mOhm when measured at 2.2A drain current and 10V gate-source voltage.

What is the operating temperature range of the PMV100EPAR?

The PMV100EPAR operates within an extended temperature range of -55°C to 175°C.

What package type is the PMV100EPAR supplied in?

The PMV100EPAR is supplied in a TO-236-3, SC-59, SOT-23-3 package, suitable for surface mounting.

What technology does the PMV100EPAR use?

The PMV100EPAR utilizes Trench MOSFET technology.

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