| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
154,020 pcs
|
154020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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| Vgs(th) (Max) @ Id |
The Nexperia PMV100EPAR is a P-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in a compact SOT23 (TO-236AB) surface-mounted device package.
This MOSFET features a drain-source voltage rating of 60V and a continuous drain current capability of 2.2A at 25°C ambient temperature. The drain-source on-state resistance (RDSon) is a maximum of 130mOhm at 2.2A and 10V gate-source voltage. It operates within an extended temperature range from -55°C to 175°C.
Key electrical characteristics include a gate-source voltage range of ±20V and an input capacitance of 616pF at 30V. The gate charge is a maximum of 17nC at 10V.
Applications for the PMV100EPAR include relay drivers, high-speed line drivers, high-side load switches, and general switching circuits. Its AEC-Q101 qualification makes it suitable for demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the PMV100EPAR is 60V.
The continuous drain current (ID) for the PMV100EPAR is 2.2A at 25°C ambient temperature.
The maximum drain-source on-state resistance (RDSon) for the PMV100EPAR is 130mOhm when measured at 2.2A drain current and 10V gate-source voltage.
The PMV100EPAR operates within an extended temperature range of -55°C to 175°C.
The PMV100EPAR is supplied in a TO-236-3, SC-59, SOT-23-3 package, suitable for surface mounting.
The PMV100EPAR utilizes Trench MOSFET technology.