| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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11,020 pcs
|
11020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs(th) (Max) @ Id |
The Nexperia PMT200EPEX is a P-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It offers a drain-source voltage of 70V and a continuous drain current of 2.4A at 25°C ambient temperature. The device features a low drain-source on-state resistance of 167mΩ maximum at 2.4A and 10V gate-source voltage.
Designed for various applications, this MOSFET is logic level compatible and provides very fast switching capabilities. Its ElectroStatic Discharge (ESD) protection exceeds 2 kV HBM. The component is housed in a medium power SOT-223 (SC-73) surface-mounted plastic package with an increased heatsink.
Key electrical characteristics include a gate-source voltage range of ±20V and a gate charge of 15.9nC maximum. The operating temperature range is -55°C to 150°C, with a maximum power dissipation of 800mW at 25°C ambient temperature. This MOSFET is suitable for applications such as relay drivers, high-speed line drivers, high-side load switches, and general switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) of the PMT200EPEX is 70V.
The maximum continuous drain current (Id) for the PMT200EPEX is 2.4A at 25°C ambient temperature.
The Rds On is a maximum of 167mΩ when the gate-source voltage is 10V and the drain current is 2.4A.
The PMT200EPEX is a P-channel Trench MOSFET.
The PMT200EPEX is supplied in a SOT-223 package.
The operating temperature range for the PMT200EPEX is -55°C to 150°C.