| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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73,000 pcs
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73000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Nexperia PMT200EPEAX is a P-Channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage of 70V and can handle a continuous drain current of 2.4A at ambient temperature. The MOSFET exhibits a maximum on-state resistance of 167mOhm at 2.4A and 10V Vgs, with a gate threshold voltage of 3V.
Key electrical characteristics include an input capacitance of 822pF and a gate charge of 15.9nC. The device operates within a temperature range of -55°C to 150°C. It is housed in a TO-261-4, TO-261AA package, commonly known as SOT-223, and is designed for surface mounting.
The technology utilized is MOSFET (Metal Oxide), providing efficient switching capabilities. The maximum power dissipation is rated at 800mW (Ta). This component is suitable for applications requiring a robust P-Channel MOSFET with specific voltage and current ratings.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage is 70V.
The continuous drain current is 2.4A.
The maximum on-state resistance is 167mOhm.
The operating temperature range is -55°C to 150°C.
It is supplied in a TO-261-4, TO-261AA package, also known as SOT-223.
The PMT200EPEAX is designed for surface mounting.