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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
40,020 pcs
|
40020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
This NPN bipolar junction transistor (BJT) from Nexperia USA Inc., part number PMSTA05,115, is suitable for surface mount applications. It offers a collector-emitter breakdown voltage of 60V and can handle a maximum collector current of 500mA. The transistor has a maximum power dissipation of 200mW and operates at frequencies up to 100MHz.
Key electrical characteristics include a Vce saturation of 250mV at 10mA/100mA and a minimum DC current gain (hFE) of 50 at 100mA/1V. The device is specified for operation up to 150°C (TJ).
Packaged in an SC-70, SOT-323 case, the PMSTA05,115 is designed for efficient integration into compact electronic circuits. Its specifications make it suitable for various general-purpose amplification and switching applications where space is a constraint.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 60V.
The maximum collector current is 500mA.
The maximum power dissipation is 200mW.
The operating temperature is up to 150°C (TJ).
The PMSTA05,115 is supplied in an SC-70, SOT-323 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.