| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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400,020 pcs
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400020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PMST2369,115 is an NPN bipolar junction transistor (BJT) designed for high-speed switching applications, particularly in portable and consumer electronics. It operates with a maximum collector current of 200 mA and a collector-emitter voltage of up to 15 V.
Key electrical characteristics include a DC current gain (hFE) ranging from 40 to 120 at 10 mA and 1 V, a collector-emitter saturation voltage (VCEsat) of 250 mV maximum at 1 mA/10 mA, and a transition frequency (fT) of 500 MHz at 10 mA and 10 V. The transistor exhibits fast switching times, with turn-on time at 10 ns and turn-off time at 20 ns.
Packaged in a SOT-323 surface-mount case, the PMST2369,115 is suitable for space-constrained designs. It has a maximum power dissipation of 200 mW at 25°C ambient temperature and an operating temperature range of -65°C to +150°C.
This component is well-suited for general-purpose switching tasks in various electronic circuits where low power and high speed are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 15 V.
The continuous collector current (IC) is 200 mA.
This transistor is supplied in a SOT-323 package.
The operating ambient temperature range is -65°C to +150°C.
The typical DC current gain (hFE) is 40 to 120 at 10 mA and 1 V.
The turn-on time is 10 ns and the turn-off time is 20 ns.