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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
85,020 pcs
|
85020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current - Peak | |
| Collector-Emitter Voltage | |
| Current | |
| DC Current Gain (Minimum @ IC = 500 mA, VCE = 10 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Peak Base Current | |
| Power | |
| Supplier Device Package | |
| Supplier Package | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The Nexperia USA Inc. PMST2222A,115 is an NPN bipolar junction transistor (BJT) designed for high-speed switching and linear amplification applications. This component offers a maximum collector-emitter voltage of 40V and a continuous collector current of up to 600mA.
Key electrical characteristics include a DC current gain (hFE) of at least 100 at 150mA and 10V, and a collector-emitter saturation voltage (VCEsat) of 1V maximum at 500mA and 50mA base current. The transistor operates at frequencies up to 300MHz.
Packaged in a compact SOT-323 surface-mount case, the PMST2222A,115 is suitable for applications where space is limited. It has a maximum power dissipation of 200mW at 25°C ambient temperature and an operating junction temperature range of -65°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 40V.
The continuous collector current is 600mA.
The transistor is supplied in a SOT-323 package.
The operating temperature range is -65°C to 150°C.
The minimum DC current gain (hFE) at 150mA and 10V is 100.
The maximum collector-emitter saturation voltage is 1V.