PMPB15XP,115 The Nexperia PMPB15XP,115 is a P-channel Trench MOSFET designed for power management applications. It offers a 12V drain-source voltage and a maximum continuous drain current of 8.2A.
Mfr Part #:

PMPB15XP,115

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PMPB15XP,115 is a P-channel Trench MOSFET designed for power management applications. It offers a 12V drain-source voltage and a maximum continuous drain current of 8.2A.
✓ Total Stock: 7,020 pcs
$ Price Range: $2.27

PMPB15XP,115 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,020 pcs
7020 pcs On Request 1 On Request On Request On Request On Request On Request

PMPB15XP,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Ambient Temperature
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Junction Temperature
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

PMPB15XP,115 Description

Short technical summary and product information.

The Nexperia PMPB15XP,115 is a P-channel enhancement mode Trench MOSFET. It is housed in a small, leadless DFN2020MD-6 (SOT1220) SMD plastic package measuring 2 x 2 x 0.65 mm, featuring an exposed drain pad for excellent thermal conduction and tin-plated side pads for optical solder inspection.

 

This MOSFET boasts a 12V drain-source voltage rating and a maximum continuous drain current of 8.2A at 25°C ambient temperature. Its Trench MOSFET technology enables a low drain-source on-state resistance of 19mΩ maximum at 8.2A and 4.5V gate-source voltage. It also includes 1.5 kV ESD protection (human body model).

 

Key electrical characteristics include a gate threshold voltage of 900mV maximum at 250µA, input capacitance of 2875 pF maximum at 6V, and gate charge of 100 nC maximum at 4.5V. The device operates within a temperature range of -55°C to 150°C and has a total power dissipation of 1.7W at 25°C ambient.

 

Applications for the PMPB15XP,115 include charging switches for portable devices, DC-to-DC converters, and power management in battery-driven portable devices, as well as hard disk and computing power management.

PMPB15XP,115 Quick Information

Product Type: MOSFET
Canonical Name: PMPB15XP,115 12 V P-Channel Trench MOSFET
Subcategory: P-Channel

PMPB15XP,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PMPB15XP,115 Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMPB15XP,115 Features

  • P-channel Trench MOSFET technology
  • 12V drain-source voltage rating
  • 8.2A maximum continuous drain current
  • Low 19mOhm on-resistance
  • 1.5kV ESD protection (HBM)

PMPB15XP,115 Applications

  • Charging switch for portable devices
  • DC-to-DC converters
  • Power management applications
  • Battery-driven devices
  • Hard disk and computing power

PMPB15XP,115 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the PMPB15XP,115?

-12 V

What is the maximum drain current of this MOSFET?

-8.2 A at 25°C, -11.8 A at 25°C (VGS = -4.5 V, t ≤ 5 s)

What package does the PMPB15XP,115 come in?

DFN2020MD-6

What is the gate threshold voltage of this device?

0.9 V at 250µA

What is the maximum gate-source voltage rating?

±12 V

What is the maximum junction temperature for this MOSFET?

150°C

Is this device RoHS compliant?

RoHS3 Compliant

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