| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,020 pcs
|
28020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Nexperia PMPB07R3VPX is a P-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in a small, leadless DFN2020M-6 (SOT1220-2) package measuring 2 x 2 x 0.65 mm, with an exposed drain pad for enhanced thermal conduction.
Key electrical specifications include a drain-source voltage (Vds) of 12V and a maximum gate-source voltage (Vgs) of ±8V. The device offers a low threshold voltage and a typical drain-source on-state resistance (Rds On) of 7.3 mΩ at 12.5A and 4.5V Vgs, with a maximum of 8.6 mΩ. It can handle a continuous drain current of 12.5A at 25°C ambient temperature.
This MOSFET is suitable for applications such as charging switches for portable devices, DC-to-DC converters, and general power management in battery-driven portable electronics and computing. Its compact size and thermal performance make it ideal for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-12 V
12.5 A
DFN2020M-6
±8 V
900 mV @ 250µA
Yes, RoHS3 compliant