| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,040 pcs
|
2040 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors PMN45EN is an N-channel enhancement mode field-effect transistor designed with TrenchMOS™ technology. This MOSFET offers very fast switching speeds and a low threshold voltage, making it suitable for various applications.
Key electrical specifications include a drain-source voltage of up to 30V and a continuous drain current of 5.2A at 25°C with a gate-source voltage of 10V. The on-state resistance is as low as 240mΩ at 10V gate-source voltage and 3A drain current.
Packaged in a surface-mount SOT457 (TSOP6) package, the PMN45EN is designed for applications such as battery-powered motor control, load switching in notebook computers, high-speed switching in set-top box power supplies, and as a driver FET in DC-to-DC converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V DC.
The continuous drain current is 5.2A at 25°C case temperature and 4.2A at 70°C.
Typical on-resistance is 240mΩ at VGS=10V, ID=3A, and 250mΩ at VGS=4.5V, ID=2.8A.
The PMN45EN is available in a SOT457 (TSOP6) surface-mount package.
The maximum junction temperature is 150°C.
The peak drain current is 21.1A under pulsed conditions (tp ≤ 10μs) at 25°C.