Mfr Part #:

PMN40XPEAX

The Nexperia PMN40XPEAX is a P-channel Trench MOSFET designed for high-speed switching applications. It offers a 20V drain-source voltage and a continuous drain current of 4.7A.

✓ Total Stock: 244 pcs

$ Price Range: $2.27

PMN40XPEAX Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Tomark Electronics Ltd ✓ Non-Authorised Inventory information	244 pcs On Request	244 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

PMN40XPEAX Description

Short technical summary and product information.

The Nexperia PMN40XPEAX is a P-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in a compact SOT457 (SC-74) surface-mounted device (SMD) plastic package.

Key electrical specifications include a drain-source voltage of 20V, a maximum gate-source voltage of ±12V, and a low threshold voltage. The device features a low drain-source on-state resistance (RDSon) of 46mΩ at 4.7A and 8V gate-source voltage, with a typical value of 43mΩ at 4.7A and 4.5V gate-source voltage. It offers a continuous drain current of 4.7A at 25°C ambient temperature.

This MOSFET is designed for applications such as relay drivers, high-speed line drivers, high-side load switches, and general switching circuits. It boasts an extended operating temperature range from -55°C to 175°C (TJ) and features ElectroStatic Discharge (ESD) protection exceeding 1000V HBM. The device is AEC-Q101 qualified, indicating its suitability for automotive applications.

The PMN40XPEAX is supplied in a 6-lead TSOP package, suitable for surface mounting. Its small footprint and robust performance make it a versatile component for various electronic designs.

PMN40XPEAX Quick Information

Product Type: MOSFET

Canonical Name: P-Channel Trench MOSFET

Subcategory: P-Channel

PMN40XPEAX Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

PMN40XPEAX Estimated Pricing

Qty	Low	High
1+	$2.27	$2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMN40XPEAX Features

P-channel Trench MOSFET technology.
20V drain-source voltage rating.
4.7A continuous drain current.
Low 46mOhm RdsOn resistance.
AEC-Q101 qualified for automotive.

PMN40XPEAX Applications

Suitable for relay driver circuits.
Ideal for high-speed line drivers.
Used in high-side load switches.
Applicable for general switching circuits.

PMN40XPEAX FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the PMN40XPEAX?

-20 V

What is the maximum gate-to-source voltage for this MOSFET?

±12 V

What is the gate threshold voltage of the PMN40XPEAX?

1.3V @ 250µA

What is the continuous drain current of this device?

4.7A

What package does the PMN40XPEAX come in?

SC-74, SOT-457

Is the PMN40XPEAX RoHS compliant?

Yes, RoHS3 Compliant

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Nexperia USA Inc.
Ambient Temperature	175 °C
Current	4.7A (Ta)
Drain to Source Voltage (Vdss)	-20 V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 8V
ESD Protection	> 1000 V HBM
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	1025 pF @ 10 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	660mW (Ta)
Rds On (Max) @ Id, Vgs	46mOhm @ 4.7A, 8V
Storage Temperature	°C ~ °C
Supplier Device Package	6-TSOP
Supplier Package	6-TSOP
Tape & Reel	No
Technology	Trench MOSFET
Vgs (Max)	±12 V
Vgs(th) (Max) @ Id	1.3V @ 250µA