PMN30XPAX The Nexperia PMN30XPAX is a P-channel Trench MOSFET designed for switching applications. It features a 20V drain-source voltage and a low Rds On resistance.
Mfr Part #:

PMN30XPAX

Available from 2 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PMN30XPAX is a P-channel Trench MOSFET designed for switching applications. It features a 20V drain-source voltage and a low Rds On resistance.
✓ Total Stock: 10,137 pcs
$ Price Range: $2.27

PMN30XPAX Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,020 pcs
7020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,117 pcs
3117 pcs On Request 1 On Request On Request 2012+ On Request On Request

PMN30XPAX Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

PMN30XPAX Description

Short technical summary and product information.

The Nexperia PMN30XPAX is a P-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in a compact SOT457 (SC-74) surface-mounted device (SMD) plastic package.

 

This MOSFET offers a drain-source voltage (Vds) of 20V and a continuous drain current (Id) of up to 5.2A at 25°C ambient temperature. The drain-source on-state resistance (Rds On) is a maximum of 33mΩ at 5.2A and 8V gate-source voltage. It features a low threshold voltage and an extended operating temperature range up to 175°C.

 

Key electrical characteristics include an input capacitance (Ciss) of 1039pF at 10V and a gate charge (Qg) of 16nC at 4.5V. The gate-source voltage (Vgs) ranges from -12V to 12V.

 

Applications for the PMN30XPAX include relay drivers, high-speed line drivers, high-side load switches, and general switching circuits. Its AEC-Q101 qualification makes it suitable for demanding automotive applications.

PMN30XPAX Quick Information

Product Type: MOSFET
Canonical Name: PMN30XPAX P-channel Trench MOSFET
Subcategory: P-Channel

PMN30XPAX Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PMN30XPAX Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMN30XPAX Features

  • P-channel Trench MOSFET technology.
  • 20V drain-source voltage rating.
  • 5.2A maximum continuous drain current.
  • Low Rds On resistance of 33mOhm.
  • Extended temperature range to 175°C.

PMN30XPAX Applications

  • Suitable for relay driver applications.
  • Ideal for high-speed line drivers.
  • Used in high-side load switch circuits.
  • Effective in general switching circuits.

PMN30XPAX FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the PMN30XPAX?

-20 V

What is the maximum drain current at 25°C?

-5.2 A

What package does the PMN30XPAX come in?

SC-74, SOT-457

What is the maximum gate-to-source voltage?

±12V

What is the typical on-state resistance (RDSon)?

30 mΩ

What is the gate threshold voltage?

1.3V @ 250µA

Is the PMN30XPAX RoHS compliant?

Yes, RoHS3 Compliant

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