PMMT591A,215 The Nexperia USA Inc. PMMT591A,215 is a PNP BISS transistor designed for battery-powered units requiring high current and low power consumption. It features a 40V breakdown voltage and 1A continuous collector current.
Mfr Part #:

PMMT591A,215

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia USA Inc. PMMT591A,215 is a PNP BISS transistor designed for battery-powered units requiring high current and low power consumption. It features a 40V breakdown voltage and 1A continuous collector current.
Total Stock: 49,020 pcs
$ Price Range: $0.48

PMMT591A,215 Available from 1 distributor

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PMMT591A,215 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base - Emitter Saturation Voltage
Base-Emitter Voltage
Collector Capacitance
Collector Current (DC)
Collector Cut-off Current (Maximum @ IB = 0; VCE = -30 V)
Collector Cut-off Current (Maximum @ IE = 0; VCB = -30 V)
Collector Emitter Saturation Voltage (Maximum @ IC = -500 mA, IB= -20 mA)
Collector-Base Voltage
Collector-Emitter Saturation Voltage (Maximum @ IC = -1 A, IB = -100 mA)
Collector-Emitter Saturation Voltage (Maximum @ IC = -100 mA; IB = -1 mA)
Collector-Emitter Voltage
Current
Current - Collector (Ic) (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) (Minimum @ IC=100 mA, VCE=5 V)
DC Current Gain (hFE) (Minimum @ VCE = -5 V; IC = -500 mA)
DC Current Gain (hFE) (Minimum @ Vce = -5 V, Ic = -1 A)
DC Current Gain (hFE) (Minimum @ Vce = -5 V, Ic = -1 mA)
DC Current Gain (hFE) (Minimum/Maximum @ VCE = -5 V; IC = -100 mA)
DC Current Gain (hFE) (Typical @ VCE = -5 V)
Emitter Cut-off Current
Emitter-Base Voltage
Frequency
Frequency - Max
Junction Temperature
Mounting Type
Operating Ambient Temperature (Minimum/Maximum)
Operating Temperature
Peak Base Current
Peak Collector Current
Power
Power Dissipation
Storage Temperature
Supplier Device Package
Thermal Resistance Junction-to-Ambient
Total Power Dissipation
Transistor Type
Transition Frequency
Vce Saturation (Max) @ Ib, Ic
Voltage
Voltage - Collector Emitter Breakdown (Max)

PMMT591A,215 Description

Short technical summary and product information.

The PMMT591A,215 is a PNP BISS (Breakthrough In Small Signal) transistor from Nexperia USA Inc., housed in a SOT23 plastic package. This component is designed for applications where high current and low power consumption are critical, such as in battery-powered units.

 

Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of -40V and a continuous collector current (IC) of 1A. The transistor offers a high DC current gain (hFE) ranging from 160 to 800 depending on the collector current, and a transition frequency (fT) of 150MHz. Its low collector-emitter saturation voltage (VCEsat) ensures reduced power consumption, with a maximum of -500mV at 1A collector current.

 

The device operates within a wide temperature range from -65°C to +150°C. It is surface-mounted and comes in a TO-236AB package, also referred to as SOT-23-3. The thermal resistance from junction to ambient is 500 K/W when mounted on an FR4 printed-circuit board.

PMMT591A,215 Quick Information

Product Type: PNP BISS Transistor
Canonical Name: PMMT591A,215 PNP BISS Transistor
Subcategory: Bipolar (BJT) - Single

PMMT591A,215 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PMMT591A,215 Estimated Pricing

Qty Low High
1+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMMT591A,215 Features

  • PNP BISS transistor for low power.
  • High current capability up to 1A.
  • Low collector-emitter saturation voltage.
  • Operates at 150MHz transition frequency.
  • Surface mount SOT-23 package.

PMMT591A,215 Applications

  • Used in switching power supplies
  • Suitable for amplification circuits
  • Ideal for high-speed switching applications
  • Designed for surface mount PCB assembly

PMMT591A,215 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the PMMT591A,215?

The maximum collector-emitter voltage (VCEO) for the PMMT591A,215 is -40V.

What is the continuous collector current rating of the PMMT591A,215?

The PMMT591A,215 has a continuous collector current (IC) rating of 1A.

What is the package type for the PMMT591A,215 transistor?

The PMMT591A,215 transistor is supplied in a SOT-23-3 package.

What is the operating temperature range for the PMMT591A,215?

The operating ambient temperature range for the PMMT591A,215 is -65°C to +150°C.

What is the DC current gain (hFE) of the PMMT591A,215 at 100mA and 5V?

The minimum DC current gain (hFE) of the PMMT591A,215 at 100mA and 5V is 300.

What is the transition frequency of the PMMT591A,215?

The transition frequency (fT) of the PMMT591A,215 is a minimum of 150MHz.

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