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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
49,020 pcs
|
49020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base - Emitter Saturation Voltage | |
| Base-Emitter Voltage | |
| Collector Capacitance | |
| Collector Current (DC) | |
| Collector Cut-off Current (Maximum @ IB = 0; VCE = -30 V) | |
| Collector Cut-off Current (Maximum @ IE = 0; VCB = -30 V) | |
| Collector Emitter Saturation Voltage (Maximum @ IC = -500 mA, IB= -20 mA) | |
| Collector-Base Voltage | |
| Collector-Emitter Saturation Voltage (Maximum @ IC = -1 A, IB = -100 mA) | |
| Collector-Emitter Saturation Voltage (Maximum @ IC = -100 mA; IB = -1 mA) | |
| Collector-Emitter Voltage | |
| Current | |
| Current - Collector (Ic) (Max) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum @ IC=100 mA, VCE=5 V) | |
| DC Current Gain (hFE) (Minimum @ VCE = -5 V; IC = -500 mA) | |
| DC Current Gain (hFE) (Minimum @ Vce = -5 V, Ic = -1 A) | |
| DC Current Gain (hFE) (Minimum @ Vce = -5 V, Ic = -1 mA) | |
| DC Current Gain (hFE) (Minimum/Maximum @ VCE = -5 V; IC = -100 mA) | |
| DC Current Gain (hFE) (Typical @ VCE = -5 V) | |
| Emitter Cut-off Current | |
| Emitter-Base Voltage | |
| Frequency | |
| Frequency - Max | |
| Junction Temperature | |
| Mounting Type | |
| Operating Ambient Temperature (Minimum/Maximum) | |
| Operating Temperature | |
| Peak Base Current | |
| Peak Collector Current | |
| Power | |
| Power Dissipation | |
| Storage Temperature | |
| Supplier Device Package | |
| Thermal Resistance Junction-to-Ambient | |
| Total Power Dissipation | |
| Transistor Type | |
| Transition Frequency | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Voltage - Collector Emitter Breakdown (Max) |
The PMMT591A,215 is a PNP BISS (Breakthrough In Small Signal) transistor from Nexperia USA Inc., housed in a SOT23 plastic package. This component is designed for applications where high current and low power consumption are critical, such as in battery-powered units.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of -40V and a continuous collector current (IC) of 1A. The transistor offers a high DC current gain (hFE) ranging from 160 to 800 depending on the collector current, and a transition frequency (fT) of 150MHz. Its low collector-emitter saturation voltage (VCEsat) ensures reduced power consumption, with a maximum of -500mV at 1A collector current.
The device operates within a wide temperature range from -65°C to +150°C. It is surface-mounted and comes in a TO-236AB package, also referred to as SOT-23-3. The thermal resistance from junction to ambient is 500 K/W when mounted on an FR4 printed-circuit board.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PMMT591A,215 is -40V.
The PMMT591A,215 has a continuous collector current (IC) rating of 1A.
The PMMT591A,215 transistor is supplied in a SOT-23-3 package.
The operating ambient temperature range for the PMMT591A,215 is -65°C to +150°C.
The minimum DC current gain (hFE) of the PMMT591A,215 at 100mA and 5V is 300.
The transition frequency (fT) of the PMMT591A,215 is a minimum of 150MHz.