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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
40,020 pcs
|
40020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Capacitance | |
| Current | |
| Current (Maximum) | |
| Current Gain (@ VCE = 5 V; note 1) | |
| Current Gain (Minimum @ VCE = 5 V; IC = 1 mA; note 1) | |
| Current Gain (Minimum @ VCE = 5 V; note 1) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Frequency (Nominal) | |
| Junction Temperature | |
| Leakage Current (Maximum @ IB = 0; VCE = 30 V) | |
| Leakage Current (Maximum @ IC = 0, VEB = -5 V) | |
| Leakage Current (Maximum @ IE = 0; VCB = 30 V) | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature - Maximum | |
| Power | |
| Power Dissipation (Maximum @ Tamb = 25 °C) | |
| Power Dissipation (Maximum) | |
| Storage Temperature | |
| Supplier Device Package | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Voltage - Maximum | |
| Voltage Saturation (Maximum @ IC = 1 A; IB = 100 mA; note 1) | |
| Voltage Saturation (Maximum @ IC = 100 mA; IB = 1 mA; note 1) | |
| Voltage Saturation (Maximum @ IC = 500 mA; IB = 50 mA; note 1) | |
| Voltage Saturation (Maximum @ Ib = 100 mA, Ic = 1 A) | |
| voltage (Maximum @ open base) | |
| voltage (Maximum @ open collector) | |
| voltage (Typical @ VCE = 5 V; IC = 1 A; note 1) |
The Nexperia PMMT491A,215 is an NPN BISS (Breakthrough In Small Signal) transistor housed in a SOT23 plastic package. This component is suitable for battery-powered units where high current and low power consumption are critical design factors.
Key electrical specifications include a maximum collector-emitter voltage of 40V and a continuous collector current of 1A. The transistor offers a DC current gain (hFE) of up to 900 at 500mA and 5V, with a low collector-emitter saturation voltage of 500mV at 1A. Its transition frequency (fT) reaches 150MHz.
The device operates within a wide temperature range from -65°C to +150°C, with a maximum power dissipation of 250mW at 25°C ambient temperature. The thermal resistance from junction to ambient is 500 K/W.
This surface-mount transistor is packaged in a TO-236AB (SOT23) package, making it suitable for compact electronic designs. Its PNP complement is the PMMT591A.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PMMT491A,215 is 40V.
The continuous collector current (IC) rating for this transistor is 1A.
The operating ambient temperature range is -65°C to +150°C.
This transistor is supplied in a TO-236AB (SOT23) surface mount package.
The DC current gain (hFE) is a minimum of 300 at 500mA and 5V, and can reach up to 900.
The collector-emitter saturation voltage (VCEsat) is a maximum of 500mV at 1A collector current and 100mA base current.
The transition frequency (fT) is a minimum of 150MHz.