PMH600UNEH The Nexperia PMH600UNEH is an N-channel Trench MOSFET designed for high-speed switching applications. It features a 20V drain-source voltage and 800mA continuous drain current.
Mfr Part #:

PMH600UNEH

Available from 2 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PMH600UNEH is an N-channel Trench MOSFET designed for high-speed switching applications. It features a 20V drain-source voltage and 800mA continuous drain current.
✓ Total Stock: 461,511 pcs
$ Price Range: $2.27

PMH600UNEH Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
450,491 pcs
450491 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
11,020 pcs
11020 pcs On Request 1 On Request On Request On Request On Request On Request

PMH600UNEH Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

PMH600UNEH Description

Short technical summary and product information.

The Nexperia PMH600UNEH is an N-channel enhancement mode MOSFET utilizing Trench MOSFET technology. It is housed in a leadless ultra-small DFN0606-3 package, measuring 0.62 x 0.62 x 0.37 mm.

 

This MOSFET offers a drain-source voltage of 20V and a continuous drain current of 800mA at 25°C ambient temperature. Key electrical characteristics include a low threshold voltage and a drain-source on-state resistance of 620mΩ maximum at 600mA and 4.5V gate-source voltage. It also features a gate charge of 0.31 nC maximum at 4.5V gate-source voltage.

 

Applications for the PMH600UNEH include relay drivers, high-speed line drivers, low-side load switches, and general switching circuits. The device provides ElectroStatic Discharge (ESD) protection greater than 1 kV HBM. Its compact size and performance make it suitable for space-constrained designs.

 

The operating temperature range is -55°C to 150°C (TJ), with a maximum power dissipation of 370mW (Ta) or 2.2W (Tc). The package is Surface Mount, specifically DFN0606-3 (SOT8001).

PMH600UNEH Quick Information

Product Type: MOSFET
Canonical Name: Nexperia PMH600UNEH N-Channel Trench MOSFET
Subcategory: N-Channel

PMH600UNEH Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PMH600UNEH Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMH600UNEH Features

  • N-channel Trench MOSFET technology.
  • 20V drain-source voltage rating.
  • 800mA continuous drain current.
  • Ultra-small DFN0606-3 package.
  • ESD protection > 1 kV HBM.

PMH600UNEH Applications

  • Suitable for relay driver circuits.
  • Ideal for high-speed line drivers.
  • Used in low-side load switches.
  • Applicable for general switching circuits.

PMH600UNEH FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the PMH600UNEH MOSFET?

The drain-source voltage (Vds) is 20V.

What is the continuous drain current for the PMH600UNEH at 25°C?

The continuous drain current (Id) is 800mA at 25°C ambient temperature.

What is the on-state resistance (RDSon) of the PMH600UNEH?

The maximum on-state resistance is 620mΩ at 600mA drain current and 4.5V gate-source voltage.

What package type is the PMH600UNEH MOSFET supplied in?

The PMH600UNEH is supplied in a DFN0606-3 surface mount package.

What is the operating temperature range for the PMH600UNEH?

The operating temperature range is -55°C to 150°C.

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