PMGD780SN,115 The Nexperia USA Inc. PMGD780SN,115 is a dual N-channel MOSFET designed for various applications. It offers a 60V drain-source voltage and a continuous drain current of up to 0.49A.
Mfr Part #:

PMGD780SN,115

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia USA Inc. PMGD780SN,115 is a dual N-channel MOSFET designed for various applications. It offers a 60V drain-source voltage and a continuous drain current of up to 0.49A.
✓ Total Stock: 121,020 pcs
$ Price Range: $1.96

PMGD780SN,115 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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121,020 pcs
121020 pcs On Request 1 On Request On Request On Request On Request On Request

PMGD780SN,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Junction Temperature
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id

PMGD780SN,115 Description

Short technical summary and product information.

The PMGD780SN,115 from Nexperia USA Inc. is a dual N-channel enhancement mode field-effect transistor utilizing TrenchMOS technology. It is housed in a compact SOT363 (SC-88) surface-mounted device package, offering a footprint 40% smaller than the SOT23.

 

Key electrical characteristics include a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) of up to 0.49A at 25°C. The device features a low on-state resistance (Rds(on)) of 920mΩ at 300mA and 10V, along with a standard level threshold voltage (Vgs(th)) of 2.5V at 250µA. Its fast switching capability and logic level gate make it suitable for driver circuits and switching applications in portable appliances.

 

The operating temperature range for this MOSFET is -55°C to 150°C, with a total power dissipation (Ptot) of 0.41W at 25°C. The SOT363 package is designed for surface mounting, providing efficient thermal performance and space savings on PCBs.

PMGD780SN,115 Quick Information

Product Type: MOSFET
Canonical Name: Dual N-channel MOSFET
Subcategory: Dual N-Channel

PMGD780SN,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PMGD780SN,115 Estimated Pricing

Qty Low High
1+ $1.96 $1.96

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMGD780SN,115 Features

  • Dual N-channel MOSFET technology.
  • 60V drain-source voltage rating.
  • 0.49A continuous drain current.
  • Low on-state resistance.
  • Compact SOT363 surface-mount package.

PMGD780SN,115 Applications

  • Suitable for switching power supplies.
  • Used in portable appliance circuits.
  • Ideal for low-voltage motor control.
  • Applicable in battery management systems.
  • Suitable for high-speed switching applications.

PMGD780SN,115 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the PMGD780SN,115?

The maximum drain-source voltage (Vds) for the PMGD780SN,115 is 60V.

What is the continuous drain current of the PMGD780SN,115?

The continuous drain current (Id) is 0.49A at 25°C with VGS = 10V.

What is the on-resistance (Rds(on)) for this MOSFET?

The Rds(on) is a maximum of 920mOhm at 300mA drain current and 10V gate-source voltage.

What is the operating temperature range of the PMGD780SN,115?

The operating temperature range is -55°C to 150°C.

What package type is the PMGD780SN,115 supplied in?

The PMGD780SN,115 is supplied in a SOT363 (SC-88) package.

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