PMGD290XN,115 The Nexperia PMGD290XN,115 is a dual N-channel MOSFET designed for low-level switching applications. It offers a 20V drain-source voltage and 860mA continuous drain current.
Mfr Part #:

PMGD290XN,115

Available from 2 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PMGD290XN,115 is a dual N-channel MOSFET designed for low-level switching applications. It offers a 20V drain-source voltage and 860mA continuous drain current.
✓ Total Stock: 175,020 pcs
$ Price Range: $1.96

PMGD290XN,115 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
108,000 pcs
108000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
67,020 pcs
67020 pcs On Request 1 On Request On Request On Request On Request On Request

PMGD290XN,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

PMGD290XN,115 Description

Short technical summary and product information.

The Nexperia PMGD290XN,115 is a dual N-channel enhancement mode field-effect transistor utilizing TrenchMOS™ technology. It is housed in a compact 6-TSSOP, SC-88, SOT-363 package, making it suitable for space-constrained designs.

 

This MOSFET features a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of up to 0.86A at 25°C. The on-state resistance (Rds On) is a maximum of 350mOhm at 200mA and 4.5V gate-source voltage, indicating low conduction losses. It also boasts a low gate charge of 0.72nC and a low gate threshold voltage of 1.5V, enabling efficient switching.

 

With an operating temperature range from -55°C to 150°C and a total power dissipation of 410mW at 25°C, the PMGD290XN,115 is designed for reliable performance. Its surface mount capability simplifies assembly processes.

 

Applications for this device include driver circuits and switching in portable appliances where low on-state resistance and fast switching are critical.

PMGD290XN,115 Quick Information

Product Type: MOSFET
Canonical Name: Dual N-channel enhancement mode field-effect transistor
Subcategory: Dual N-Channel

PMGD290XN,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PMGD290XN,115 Estimated Pricing

Qty Low High
1+ $1.96 $1.96

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMGD290XN,115 Features

  • Dual N-channel MOSFET technology.
  • 20V drain-source voltage rating.
  • Low on-state resistance.
  • Compact 6-TSSOP package.
  • Suitable for portable appliances.

PMGD290XN,115 Applications

  • Suitable for low-voltage switching applications.
  • Ideal for portable device power management.
  • Used in driver circuits for small loads.
  • Applicable in compact, surface-mount circuit designs.

PMGD290XN,115 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the PMGD290XN,115?

The maximum drain-source voltage (Vds) is 20V.

What is the continuous drain current of the PMGD290XN,115?

The continuous drain current is up to 0.86A at 25°C with VGS = 4.5V.

What is the on-resistance of the PMGD290XN,115?

The maximum on-resistance (Rds On) is 350mOhm at 200mA drain current and 4.5V gate-source voltage.

What is the package type for the PMGD290XN,115?

The PMGD290XN,115 is supplied in a 6-TSSOP, SC-88, SOT-363 package.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C (TJ).

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