PMGD280UN,115 The Nexperia PMGD280UN,115 is a dual N-channel MOSFET designed for driver circuits and switching applications. It features a 20V drain-source voltage and a low on-state resistance.
Mfr Part #:

PMGD280UN,115

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PMGD280UN,115 is a dual N-channel MOSFET designed for driver circuits and switching applications. It features a 20V drain-source voltage and a low on-state resistance.
✓ Total Stock: 19,020 pcs
$ Price Range: $1.96

PMGD280UN,115 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
19,020 pcs
19020 pcs On Request 1 On Request On Request On Request On Request On Request

PMGD280UN,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

PMGD280UN,115 Description

Short technical summary and product information.

The Nexperia PMGD280UN,115 is a dual N-channel enhancement mode field-effect transistor utilizing TrenchMOS™ technology. It is housed in a compact 6-TSSOP, SC-88, SOT-363 surface mount package, offering a footprint 40% smaller than the SOT23.

 

This MOSFET is suitable for driver circuits and switching applications in portable appliances. Key electrical characteristics include a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of up to 0.87A at 25°C. The on-state resistance (Rds On) is a maximum of 340mOhm at 200mA and 4.5V gate-source voltage. It also features a low threshold voltage (Vgs(th)) of 1V at 250µA and a gate charge (Qg) of 0.89nC at 4.5V.

 

The device operates within a temperature range of -55°C to 150°C. Its technology is MOSFET (Metal Oxide) with a logic level gate feature, making it versatile for various circuit designs. The dual device configuration provides two N-channel MOSFETs in a single package.

PMGD280UN,115 Quick Information

Product Type: MOSFET
Canonical Name: PMGD280UN,115 Dual N-channel MOSFET
Subcategory: Dual N-Channel

PMGD280UN,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PMGD280UN,115 Estimated Pricing

Qty Low High
1+ $1.96 $1.96

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMGD280UN,115 Features

  • Dual N-channel MOSFET technology.
  • 20V drain-source voltage rating.
  • Low on-state resistance of 340mOhm.
  • Compact 6-TSSOP, SC-88, SOT-363 package.
  • Logic level gate feature.

PMGD280UN,115 Applications

  • Suitable for low-voltage switching applications.
  • Ideal for portable device power management.
  • Used in driver circuits for small loads.
  • Applicable in compact, surface-mount circuit designs.

PMGD280UN,115 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the PMGD280UN,115?

The maximum drain-source voltage (Vds) for the PMGD280UN,115 is 20V.

What is the continuous drain current rating?

The continuous drain current (Id) is rated at 0.87A.

What is the on-resistance of this MOSFET?

The maximum on-resistance (Rds On) is 340mOhm when measured at 200mA drain current and 4.5V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the PMGD280UN,115 supplied in?

The PMGD280UN,115 is supplied in a 6-TSSOP, SC-88, SOT-363 package.

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