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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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| Voltage |
The PMEG6010CEGWJ is a 60V, 1A Schottky barrier rectifier diode manufactured by Nexperia. It is designed for low voltage rectification and high efficiency DC-to-DC conversion applications. The device features a low forward voltage of typically 570 mV and a low reverse current of typically 11 µA, contributing to reduced power losses.
The diode is housed in a small SOD123 surface mount package, making it suitable for compact designs. It has a maximum junction temperature of 150°C and a storage temperature range of -65°C to +150°C. The thermal resistance from junction to ambient is 305 K/W, and from junction to solder point is 21 K/W.
Key electrical characteristics include a reverse voltage rating of 60V, average forward current of 1A, and non-repetitive peak forward current of 9A. The device also offers a fast reverse recovery time of less than 500 ns. These specifications make it ideal for switch mode power supplies, reverse polarity protection, and low power consumption applications.
The maximum reverse voltage is 60V at Tj=25°C.
The maximum average forward current is 1A under specified conditions (δ=0.5, f=20kHz, square wave, Tsp≤135°C).
The typical forward voltage is 570 mV and maximum is 660 mV at IF=1A, Tj=25°C.
The maximum reverse recovery time is less than 500 ns when Io>200mA.
It is available in a SOD123 surface mount package.
The typical reverse current is 11 µA and maximum is 50 µA at VR=60V, Tj=25°C.
The maximum junction temperature is 150°C.