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PMDXB600UNEZ The Nexperia USA Inc. PMDXB600UNEZ is a dual N-channel Trench MOSFET designed for various switching applications. It offers a 20V drain-source voltage and 600mA continuous drain current.
Mfr Part #:

PMDXB600UNEZ

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia USA Inc. PMDXB600UNEZ is a dual N-channel Trench MOSFET designed for various switching applications. It offers a 20V drain-source voltage and 600mA continuous drain current.
✓ Total Stock: 6,020 pcs
$ Price Range: $1.96

PMDXB600UNEZ Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
6,020 pcs
On Request
6020 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

PMDXB600UNEZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
ESD Protection
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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PMDXB600UNEZ Description

Short technical summary and product information.

The Nexperia USA Inc. PMDXB600UNEZ is a dual N-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in a leadless ultra-small DFN1010B-6 (SOT1216) package, measuring 1.1 x 1.0 x 0.37 mm, with an exposed drain pad for enhanced thermal conduction.

 

Key electrical characteristics include a maximum drain-source voltage of 20V and a continuous drain current of 600mA at 25°C ambient temperature. The drain-source on-state resistance (Rds On) is specified as 470 mΩ typical at 600mA and 4.5V gate-source voltage. It also features a logic level gate and ESD protection exceeding 1 kV HBM.

 

This MOSFET is suitable for applications such as relay drivers, high-speed line drivers, low-side load switches, and general switching circuits. The compact package and performance characteristics make it a versatile component for space-constrained designs.

PMDXB600UNEZ Quick Information

Product Type: MOSFET
Canonical Name: PMDXB600UNEZ Dual N-Channel Trench MOSFET
Subcategory: Dual N-Channel

PMDXB600UNEZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PMDXB600UNEZ Estimated Pricing

Qty Low High
1+ $1.96 $1.96

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMDXB600UNEZ Features

  • Dual N-channel Trench MOSFET technology.
  • 20V drain-source voltage rating.
  • 600mA continuous drain current.
  • Low Rds On of 470mΩ typical.
  • Ultra-small DFN1010B-6 package.

PMDXB600UNEZ Applications

  • Ideal for relay driver circuits.
  • Suitable for high-speed line drivers.
  • Used in low-side load switches.
  • Applicable for general switching circuits.

PMDXB600UNEZ FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the PMDXB600UNEZ?

The maximum drain-source voltage is 20V.

What is the typical Rds On for the PMDXB600UNEZ?

The typical drain-source on-state resistance is 470 mΩ at 600mA and 4.5V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the PMDXB600UNEZ in?

The PMDXB600UNEZ is in a DFN1010B-6 package.

Does the PMDXB600UNEZ have ESD protection?

Yes, it has ElectroStatic Discharge (ESD) protection greater than 1 kV HBM.

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