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PMDXB600UNELZ The Nexperia PMDXB600UNELZ is a dual N-channel Trench MOSFET with a 20V drain-source voltage and 600mA continuous drain current. It is supplied in a compact DFN1010B-6 package.
Mfr Part #:

PMDXB600UNELZ

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PMDXB600UNELZ is a dual N-channel Trench MOSFET with a 20V drain-source voltage and 600mA continuous drain current. It is supplied in a compact DFN1010B-6 package.
✓ Total Stock: 156,020 pcs
$ Price Range: $1.96

PMDXB600UNELZ Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
156,020 pcs
On Request
156020 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

PMDXB600UNELZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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PMDXB600UNELZ Description

Short technical summary and product information.

The Nexperia PMDXB600UNELZ is a dual N-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It offers a drain-source voltage of 20V and a continuous drain current of 600mA at 25°C. The device features a low leakage current and ESD protection exceeding 1kV HBM.

 

Key electrical characteristics include a typical drain-source on-state resistance of 470mΩ at 600mA and 4.5V gate-source voltage, and a maximum gate charge of 0.7nC at 4.5V. The MOSFET operates within a temperature range of -55°C to 150°C (TJ).

 

This component is housed in a leadless ultra-small and ultra-thin DFN1010B-6 (SOT1216) surface-mounted device plastic package, measuring 1.1 x 1.0 x 0.37 mm. It includes an exposed drain pad for enhanced thermal conduction. Applications include relay drivers, high-speed line drivers, low-side load switches, and general switching circuits.

PMDXB600UNELZ Quick Information

Product Type: MOSFET
Canonical Name: PMDXB600UNELZ Dual N-Channel Trench MOSFET
Subcategory: Arrays

PMDXB600UNELZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PMDXB600UNELZ Estimated Pricing

Qty Low High
1+ $1.96 $1.96

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMDXB600UNELZ Features

  • Dual N-channel Trench MOSFET technology.
  • 20V drain-source voltage rating.
  • 600mA continuous drain current.
  • 470mΩ typical Rds(on).
  • Ultra-small DFN1010B-6 package.

PMDXB600UNELZ Applications

  • Suitable for relay driver circuits.
  • Used in high-speed line drivers.
  • Ideal for low-side load switches.
  • Applicable in general switching circuits.

PMDXB600UNELZ FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the PMDXB600UNELZ MOSFET?

The drain-source voltage (Vds) is 20V.

What is the continuous drain current for the PMDXB600UNELZ?

The continuous drain current (Id) is 600mA.

What is the typical on-state resistance (Rds On) of the PMDXB600UNELZ?

The typical drain-source on-state resistance is 470mΩ at 600mA and 4.5V.

What package type is the PMDXB600UNELZ MOSFET supplied in?

The PMDXB600UNELZ is supplied in a DFN1010B-6 package.

What is the operating temperature range for the PMDXB600UNELZ?

The operating temperature range is -55°C to 150°C (TJ).

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