| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
182,942 pcs
|
182942 pcs | On Request | 1 | On Request | On Request | 1615+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Nexperia PMDXB550UNEZ is a dual N-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It offers a drain-source voltage of 30V and a continuous drain current of up to 590mA at 25°C ambient temperature.
Key electrical characteristics include a maximum on-state resistance of 670mΩ at 590mA and 4.5V Vgs, an input capacitance of 30.3pF, and a gate charge of 1.05nC. The threshold voltage is a maximum of 950mV at 250µA.
This MOSFET is housed in a leadless ultra-small and ultra-thin DFN1010B-6 (SOT1216) surface-mounted device plastic package, measuring 1.1 x 1.0 x 0.37 mm. It features an exposed drain pad for excellent thermal conduction and ESD protection exceeding 2 kV HBM.
Applications for the PMDXB550UNEZ include relay drivers, high-speed line drivers, low-side load switches, and general switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.96 | $1.96 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 30V.
The maximum continuous drain current is 590mA.
The maximum on-state resistance is 670mΩ.
The operating temperature range is -55°C to 150°C.
It is supplied in a DFN1010B-6 package.