| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17,020 pcs
|
17020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Nexperia PMDT670UPE,115 is a dual P-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in an ultra-small and flat SOT666 surface-mounted device (SMD) plastic package.
Key electrical specifications include a drain-source voltage of 20V and a continuous drain current of 550mA per transistor. The drain-source on-state resistance is a maximum of 0.85 Ohm at 400mA and 4.5V gate-source voltage. It features ESD protection up to 2 kV.
This MOSFET is suitable for applications such as relay drivers, high-speed line drivers, high-side load switches, and general switching circuits. The SOT-666 package is designed for surface mounting, offering a compact solution for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.96 | $1.96 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 20V.
The maximum continuous drain current is 550mA.
The drain-source on-state resistance is a maximum of 0.85 Ohm at 400mA and 4.5V.
The operating temperature range is -55°C to 150°C.
It is in a SOT-666 package.
Yes, it has ESD protection up to 2 kV.