PMDT290UNE,115 The Nexperia PMDT290UNE,115 is a dual N-channel Trench MOSFET with a 20V drain-source voltage and 800mA continuous drain current. It is supplied in a surface-mount SOT-666 package.
Mfr Part #:

PMDT290UNE,115

Available from 3 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PMDT290UNE,115 is a dual N-channel Trench MOSFET with a 20V drain-source voltage and 800mA continuous drain current. It is supplied in a surface-mount SOT-666 package.
✓ Total Stock: 49,170 pcs
$ Price Range: $1.96

PMDT290UNE,115 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
45,020 pcs
45020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
150 pcs
150 pcs On Request 1 On Request On Request On Request On Request On Request

PMDT290UNE,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

PMDT290UNE,115 Description

Short technical summary and product information.

The Nexperia PMDT290UNE,115 is a dual N-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is designed for applications requiring fast switching and low on-state resistance.

 

Key electrical specifications include a maximum drain-source voltage of 20V and a continuous drain current of 800mA at 25°C ambient temperature. The drain-source on-state resistance (RDSon) is a maximum of 380mΩ at 500mA drain current and 4.5V gate-source voltage. The device features a logic level gate and ESD protection up to 2kV.

 

This MOSFET is housed in an ultra-small and flat SOT666 surface-mounted device (SMD) plastic package with a 0.5mm pitch. The operating temperature range is -55°C to 150°C (TJ).

 

Applications for the PMDT290UNE,115 include relay drivers, high-speed line drivers, low-side load switches, and general switching circuits.

PMDT290UNE,115 Quick Information

Product Type: MOSFET
Canonical Name: Nexperia PMDT290UNE,115 Dual N-Channel Trench MOSFET
Subcategory: FET, MOSFET Arrays

PMDT290UNE,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PMDT290UNE,115 Estimated Pricing

Qty Low High
1+ $1.96 $1.96

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMDT290UNE,115 Features

  • Dual N-channel Trench MOSFET technology.
  • 20V drain-source voltage rating.
  • 800mA continuous drain current.
  • Low RDSon of 380mΩ maximum.
  • Compact SOT-666 surface-mount package.

PMDT290UNE,115 Applications

  • Suitable for relay driver applications.
  • Ideal for high-speed line drivers.
  • Used as a low-side load switch.
  • Applicable in general switching circuits.

PMDT290UNE,115 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the PMDT290UNE,115?

The drain-source voltage (VDS) for the PMDT290UNE,115 is 20V.

What is the continuous drain current of the PMDT290UNE,115?

The continuous drain current (ID) for the PMDT290UNE,115 is 800mA at 25°C.

What is the Rds On for the PMDT290UNE,115?

The Rds On is a maximum of 380mΩ at 500mA and 4.5V Vgs.

What package type is the PMDT290UNE,115 supplied in?

The PMDT290UNE,115 is supplied in a SOT-666 surface-mount package.

What is the operating temperature range for this MOSFET?

The operating temperature range for the PMDT290UNE,115 is -55°C to 150°C.

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