Mfr Part #:

PMDT290UNE

The Nexperia PMDT290UNE is a dual N-channel Trench MOSFET designed for high-speed switching applications. It offers a drain-source voltage of 20V and a continuous drain current of 800mA.

✓ Total Stock: 278,840 pcs

$ Price Range: $1.25

PMDT290UNE Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	277,016 pcs On Request	277016 pcs	On Request	1	On Request	On Request	17+	On Request	On Request
Rayichip ✓ Non-Authorised Inventory information	1,824 pcs On Request	1824 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

PMDT290UNE Specifications Quick View

Most important parameters for selection – full specs in datasheet.

SELECT ALL

Category	New Products
Manufacturer Name	Nexperia USA Inc.
Ambient Temperature	-55 / +150 °C
ESD Protection	2000 V
Junction Temperature	-55 / +150 °C
Mounting Type	Surface Mount
Storage Temperature	°C ~ °C
Tape & Reel	No

View Similar Products (0)

PMDT290UNE Description

Short technical summary and product information.

The Nexperia PMDT290UNE is a dual N-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in an ultra-small and flat SOT666 surface-mounted device (SMD) plastic package.

Key electrical characteristics include a drain-source voltage rating of 20V and a continuous drain current of 800mA at 25°C ambient temperature when VGS is 4.5V. The drain-source on-state resistance is specified as a maximum of 380 mΩ under typical test conditions (VGS = 4.5V, ID = 500mA, Tj = 25°C).

This MOSFET offers very fast switching capabilities and ESD protection up to 2 kV (HBM). Its features make it suitable for applications such as relay drivers, high-speed line drivers, low-side load switches, and general switching circuits.

The device operates within a junction temperature range of -55°C to 150°C and an ambient temperature range of -55°C to 150°C. It is supplied in a SOT666 package, a surface-mounted type with 6 leads and a 0.5 mm pitch, measuring 1.6 mm x 1.2 mm x 0.55 mm.

PMDT290UNE Quick Information

Product Type: MOSFET

Canonical Name: Dual N-channel Trench MOSFET

Subcategory: Trench MOSFET

PMDT290UNE Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

PMDT290UNE Estimated Pricing

Qty	Low	High
1+	$1.25	$1.25

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMDT290UNE Features

Dual N-channel Trench MOSFET technology.
20V drain-source voltage rating.
800mA continuous drain current.
Fast switching characteristics.
ESD protection up to 2kV.

PMDT290UNE Applications

Suitable for relay driver circuits.
Ideal for high-speed line drivers.
Used as a low-side load switch.
Applicable in general switching circuits.

PMDT290UNE FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage for the PMDT290UNE?

The maximum drain-source voltage is 20 V.

What is the continuous drain current rating?

The continuous drain current is 800 mA at VGS = 4.5 V and Tamb = 25 °C.

What is the typical on-state resistance (RDSon)?

The typical on-state resistance is 290 mΩ at VGS = 4.5 V, ID = 500 mA, and Tj = 25 °C.

What type of package does the PMDT290UNE come in?

It comes in a SOT666 package.

What are the operating temperature limits?

The junction temperature ranges from -55°C to 150°C, and the ambient temperature ranges from -55°C to 150°C.

What is the ESD protection level?

The device offers ESD protection up to 2000 V (HBM).