| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,020 pcs
|
7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The PMDPB70XPE,115 is a power MOSFET manufactured by Nexperia USA Inc. It features a drain-to-source voltage of 20V and a maximum drain current of 3A at 25°C. The device has a drain-source on-state resistance of 79 milliohms and a gate threshold voltage of 1.25V at 250µA. It is packaged in a 6HUSON package suitable for surface mounting. This MOSFET is used in switching power supplies, motor control, and other applications requiring efficient power switching. Its low on-resistance and high peak drain current make it suitable for high-efficiency designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.96 | $1.96 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 20V.
The maximum drain current at 25°C is 3A.
The drain-source on-state resistance is 79 milliohms.
The gate threshold voltage is 1.25V at 250µA.
It is packaged in a 6HUSON surface-mount package.