| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Power Dissipation |
The SC PMD18D80 is an NPN Darlington transistor manufactured by SC. This component is designed for various electronic applications requiring high current gain and power handling capabilities.
Key electrical specifications include a maximum collector current of 50A and a breakdown voltage of 80V (V(BR)CBO and V(BR)CEO). The device can dissipate up to 300W of power. It features a minimum static current gain of 1.0k and a maximum current gain of 20k.
The transistor is housed in a TO-3 package, indicating a through-hole mounting type suitable for robust applications. The semiconductor material is silicon.
This component is suitable for applications requiring amplification or switching of high currents. Its robust specifications make it a candidate for power supply circuits, motor control, and other demanding electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The absolute maximum collector current for the PMD18D80 is 50A.
The PMD18D80 has a breakdown voltage of 80V for both collector-base (V(BR)CBO) and collector-emitter (V(BR)CEO).
The PMD18D80 has an absolute maximum power dissipation of 300W.
The PMD18D80 comes in a TO-3 package.