| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The NTE Electronics NTE2592 is a high-power NPN bipolar junction transistor (BJT) housed in a TO3-PBL package. It is designed for through-hole mounting.
Key electrical characteristics include a maximum collector-emitter voltage (Vce) of 800V and a continuous collector current (Ic) of 25A. The device offers a maximum power dissipation (Pd) of 300W. Its DC current gain (hFE) ranges from 8 to 40 at 8V and 8A, with a minimum transition frequency (fT) of 15MHz.
This transistor is suitable for power switching and amplification applications where high voltage and current handling capabilities are required. The TO3-PBL package is designed for efficient heat dissipation, making it suitable for demanding environments. The through-hole mounting allows for robust mechanical connections in various circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 800V.
The maximum collector current is 25A.
The maximum power dissipation is 300W.
The DC current gain ranges from 8 to 40 at a test condition of 8V and 8A.
The minimum transition frequency is 15MHz.
The package type is TO3-PBL.
Mounting type is through-hole.