| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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190,020 pcs
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190020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PMBTA56-QR is a PNP general-purpose transistor designed for switching and amplification applications. It comes in a compact SOT23 plastic package, making it suitable for surface-mount designs.
Key electrical characteristics include a maximum collector-emitter voltage of 80V and a maximum collector current of 500mA. The transistor features a minimum DC current gain (hFE) of 100 at 10mA collector current and 1V Vce. It also has a maximum Vce saturation of 250mV at 10mA base current and 100mA collector current.
With a maximum power dissipation of 250mW and an operating temperature range up to 150°C, the PMBTA56-QR is suitable for various applications. Its NPN complement is the PMBTA06. The device is qualified according to AEC-Q101, making it recommended for automotive applications.
Mounting is via surface mount technology. The package is TO-236-3, SC-59, SOT-23-3, with a pitch of 1.9 mm and body dimensions of 2.9 mm x 1.3 mm x 1 mm.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PMBTA56-QR is -80 V.
The maximum continuous collector current (IC) is -500 mA.
The minimum DC current gain (hFE) is 100 under conditions of VCE = -1 V and IC = -10 mA at 25°C.
The PMBTA56-QR is supplied in a SOT23 plastic package.
The operating ambient temperature range is -65°C to 150°C.
Yes, the PMBTA56-QR is qualified according to AEC-Q101 and recommended for use in automotive applications.