| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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298,020 pcs
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298020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
100,000 pcs
|
100000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 |
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The Nexperia PMBTA56,215 is a PNP general-purpose transistor housed in a compact SOT-23 plastic package. This component is suitable for general-purpose switching and amplification applications, finding use in areas such as telephony and professional communication equipment.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 80 V and a maximum collector current (IC) of 500 mA. The transistor exhibits a DC current gain (hFE) of at least 100 at specified conditions. It has a power dissipation rating of 250 mW and a gain bandwidth product (fT) of 50 MHz.
The device operates within a temperature range of -65 °C to 150 °C. It is supplied in a surface-mount TO-236AB package, specifically the SOT-23-3 variant, designed for efficient integration into electronic circuits. The Nexperia PMBTA56,215 is a reliable choice for designers needing a versatile PNP transistor for various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PMBTA56,215 is 80 V.
The PMBTA56,215 transistor has a maximum collector current (IC) of 500 mA.
The power dissipation (Ptot) for the PMBTA56,215 is 250 mW at an ambient temperature of 25 °C.
The operating ambient temperature range for the PMBTA56,215 is from -65 °C to 150 °C.
The PMBTA56,215 is supplied in a surface-mount TO-236AB package, also known as SOT-23-3.
The gain bandwidth product (fT) for the PMBTA56,215 is typically 50 MHz.