| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,137 pcs
|
5137 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Transistor Type |
The PMBTA42 is a high-voltage NPN bipolar junction transistor (BJT) manufactured by Nexperia. It is designed for applications requiring a breakdown voltage of up to 300V and can handle a maximum collector current of 100mA. The transistor offers a maximum power dissipation of 250mW and a transition frequency of 50MHz.
This component is supplied in a surface-mount TO-236AB package, making it suitable for compact electronic designs. The Vce saturation is specified at 500mV maximum under specific base and collector current conditions (2mA, 20mA). Its DC current gain (hFE) is a minimum of 40 at 30mA collector current and 10V Vce.
The PMBTA42 is categorized under single bipolar transistors and is suitable for various general-purpose amplification and switching applications where high voltage is a requirement. Its specifications make it a reliable choice for designers needing a robust NPN transistor for their circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.25 | $1.25 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current is 100mA.
The collector-emitter breakdown voltage is 300V.
The Vce saturation voltage is 0.5V at 2mA and 20mA.
The DC current gain is at least 40 at 30mA and 10V.
It uses a TO-236AB surface mount package.
It is listed as RoHS3 compliant.