| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
177,000 pcs
|
177000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
73,249 pcs
|
73249 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request | |
|
275 pcs
|
275 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Package / Case | |
| Power Dissipation (Max) | |
| Transistor Type |
The Nexperia USA Inc. PMBTA42 is a single NPN bipolar junction transistor (BJT) suitable for various electronic applications. It offers a high collector-emitter breakdown voltage of 300V and can handle a maximum collector current of 100mA.
Key electrical characteristics include a maximum power dissipation of 250mW and a transition frequency of 50MHz. The transistor exhibits a minimum DC current gain (hFE) of 40 at 30mA and 10V. Its Vce saturation is specified at a maximum of 500mV at 2mA collector current and 20mA base current, with a collector cutoff current (ICBO) of 100nA.
This component is available in a surface mount TO-236AB package, facilitating integration into compact circuit designs. The packaging options include Cut Tape (CT) and Digi-Reel®, suitable for automated assembly processes. The MSL rating is 1, indicating unlimited usability under standard conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.54 | $0.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 300V.
The maximum collector current (Ic) is 100mA.
The maximum power dissipation is 250mW.
The PMBTA42 is available in a TO-236AB surface mount package.
The MSL is 1 Unlimited.