| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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379,020 pcs
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379020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PMBTA06-QR is an NPN general-purpose transistor designed for switching and amplification applications. Encapsulated in a compact SOT23 surface-mounted device (SMD) plastic package, this transistor offers a maximum collector-emitter voltage of 80V and a maximum collector current of 500mA.
Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 100mA and 1V, and a Vce saturation of 250mV at 10mA, 100mA. The device operates within a junction temperature range of -65°C to 150°C and has a total power dissipation of 250mW at 25°C ambient temperature.
Qualified according to AEC-Q101, the PMBTA06-QR is recommended for use in automotive applications. Its small footprint and robust performance make it suitable for general-purpose switching and amplification tasks in various electronic equipment, including telephony and professional communication systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PMBTA06-QR is 80V.
The maximum continuous collector current (IC) for the PMBTA06-QR is 500mA.
The DC current gain (hFE) of the PMBTA06-QR is a minimum of 100 at 100mA collector current and 1V collector-emitter voltage.
The PMBTA06-QR is supplied in a SOT23 surface-mounted plastic package.
The operating temperature range for the PMBTA06-QR is -65°C to 150°C.
Yes, the PMBTA06-QR is qualified according to AEC-Q101 and recommended for use in automotive applications.