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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Ambient Temperature | |
| Collector Capacitance | |
| Collector Current | |
| Collector-Base Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Capacitance | |
| Emitter-Base Cut-off Current | |
| Emitter-Base Voltage | |
| Frequency | |
| ICBO (Maximum @ VCB = 120 V; IE = 0 A; Tj = 25 °C) | |
| ICBO (Maximum @ VCB = 120 V; Tamb = 100 °C) | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Peak Base Current | |
| Peak Collector Current | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Thermal Resistance Junction-to-Ambient | |
| Total Power Dissipation | |
| Transistor Type | |
| Transition Frequency | |
| VBEsat (Maximum @ IC = 10 mA; IB = 1 mA) | |
| VBEsat (Maximum @ IC = 50 mA; IB = 5 mA) | |
| VCEsat (Maximum @ IC = 10 mA; IB = 1 mA) | |
| VCEsat (Maximum @ IC = 50 mA; IB = 5 mA) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hFE (Minimum @ VCE = -5 V; IC = -1 mA) | |
| hFE (Minimum @ VCE = 5 V; IC = 10 mA; Tj = 25 °C) | |
| hFE (Minimum @ VCE = 5 V; IC = 50 mA; Tj = 25 °C) | |
| hfe (Minimum @ Ic=10 mA, Vce=5 V) |
The Nexperia PMBT5551,235 is an NPN high-voltage transistor housed in a compact SOT-23 plastic package. This component is suitable for general-purpose applications requiring a low current transistor with a high voltage breakdown.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 160V and a continuous collector current (IC) of up to 300mA. The transistor offers a DC current gain (hFE) of at least 80 at 10mA and 5V. Its transition frequency (fT) reaches 300MHz, making it suitable for various switching and amplification tasks.
The device operates at temperatures up to 150°C (TJ) and has a total power dissipation of 250mW at 25°C ambient temperature when mounted on an FR4 PCB. The SOT-23 package is designed for surface mounting, facilitating automated assembly processes.
This transistor is specified with a collector-base voltage (VCBO) of 180V and an emitter-base voltage (VEBO) of 6V. Saturation voltages (VCEsat) are typically low, with VCEsat at 200mV maximum for 5mA base current and 50mA collector current.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PMBT5551,235 is 160V.
The maximum continuous collector current (IC) for this transistor is 300mA.
The transition frequency (fT) of the PMBT5551,235 is 300MHz.
The PMBT5551,235 is supplied in a TO-236AB package, also known as SOT-23-3.
The maximum junction temperature (TJ) for this transistor is 150°C.
The RoHS status is compliant.
The Moisture Sensitivity Level (MSL) is 1.