| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,700 pcs
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2700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The NXP Semiconductors PMBT5551,215 is an NPN high-voltage transistor housed in a compact SOT23 plastic package. This component is suitable for general purpose applications and offers a low current capability with a maximum of 300 mA and a high voltage rating of up to 160 V.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 160V and a collector current (IC) of 300mA. The transistor also exhibits a collector-base voltage (VCBO) of 180V and an emitter-base voltage (VEBO) of 6V. Saturation voltages are specified, with VCEsat at a maximum of 200 mV and VBEsat at a maximum of 1V under specific test conditions.
Thermal considerations include a maximum total power dissipation of 250 mW at an ambient temperature of 25°C, with a junction temperature limit of 150°C. The thermal resistance from junction to ambient is 500 K/W.
The device is supplied in a SOT23 surface-mounted package with a pitch of 1.9 mm and body dimensions of 2.9 mm x 1.3 mm x 1 mm. This makes it suitable for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.16 | $2.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PMBT5551,215 is 160 V.
The maximum collector current (IC) for the PMBT5551,215 is 300 mA.
The PMBT5551,215 transistor is in a SOT23 plastic package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.