PMBT5551,215 The NXP Semiconductors PMBT5551,215 is an NPN high-voltage transistor designed for general purpose applications. It features a maximum collector-emitter voltage of 160V and a maximum collector current of 300mA.
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PMBT5551,215

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors PMBT5551,215 is an NPN high-voltage transistor designed for general purpose applications. It features a maximum collector-emitter voltage of 160V and a maximum collector current of 300mA.
✓ Total Stock: 2,700 pcs
$ Price Range: $2.16

PMBT5551,215 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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2,700 pcs
2700 pcs On Request 1 On Request On Request On Request On Request On Request

PMBT5551,215 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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PMBT5551,215 Description

Short technical summary and product information.

The NXP Semiconductors PMBT5551,215 is an NPN high-voltage transistor housed in a compact SOT23 plastic package. This component is suitable for general purpose applications and offers a low current capability with a maximum of 300 mA and a high voltage rating of up to 160 V.

 

Key electrical characteristics include a collector-emitter voltage (VCEO) of 160V and a collector current (IC) of 300mA. The transistor also exhibits a collector-base voltage (VCBO) of 180V and an emitter-base voltage (VEBO) of 6V. Saturation voltages are specified, with VCEsat at a maximum of 200 mV and VBEsat at a maximum of 1V under specific test conditions.

 

Thermal considerations include a maximum total power dissipation of 250 mW at an ambient temperature of 25°C, with a junction temperature limit of 150°C. The thermal resistance from junction to ambient is 500 K/W.

 

The device is supplied in a SOT23 surface-mounted package with a pitch of 1.9 mm and body dimensions of 2.9 mm x 1.3 mm x 1 mm. This makes it suitable for space-constrained designs.

PMBT5551,215 Quick Information

Product Type: Transistor
Canonical Name: NPN high-voltage transistor
Subcategory: High-Voltage

PMBT5551,215 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PMBT5551,215 Estimated Pricing

Qty Low High
1+ $2.16 $2.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMBT5551,215 Features

  • NPN high-voltage transistor.
  • Maximum collector-emitter voltage 160V.
  • Maximum collector current 300mA.
  • Compact SOT23 plastic package.
  • Suitable for general purpose applications.

PMBT5551,215 Applications

  • Suitable for high-voltage switching applications.
  • Used in general-purpose transistor circuits.
  • Ideal for low-current amplification tasks.
  • Applicable in surface-mount electronic designs.

PMBT5551,215 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the PMBT5551,215?

The maximum collector-emitter voltage (VCEO) for the PMBT5551,215 is 160 V.

What is the maximum collector current of the PMBT5551,215 transistor?

The maximum collector current (IC) for the PMBT5551,215 is 300 mA.

What type of package is the PMBT5551,215 transistor in?

The PMBT5551,215 transistor is in a SOT23 plastic package.

What is the RoHS status of the PMBT5551,215?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the PMBT5551,215?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

What is the REACH status for the PMBT5551,215?

The REACH status is REACH Unaffected.

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