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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Ambient Temperature | |
| Current | |
| Current Gain (Minimum @ VCE = 5 V; IC = 10 mA; Tj = 25 °C) | |
| Current Gain (Minimum @ VCE = 5 V; IC = 50 mA; Tj = 25 °C) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Junction Temperature | |
| Leakage Current (Maximum @ VCB = 120 V; IE = 0 A; Tj = 25 °C) | |
| Leakage Current (Maximum @ VCB = 120 V; Tamb = 100 °C) | |
| Leakage Current (Maximum @ VEB = 4 V; IC = 0 A) | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Maximum @ Tamb = 25 °C) | |
| Storage Temperature | |
| Supplier Device Package | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| capacitance (Maximum @ VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz) | |
| capacitance (Maximum @ VEB = 0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz) | |
| current (Maximum @ single pulse; tp ≤ 1 ms) | |
| voltage (Maximum @ IC = 50 mA; IB = 5 mA) | |
| voltage (Maximum @ open base) | |
| voltage (Maximum @ open collector) | |
| voltage (Maximum @ open emitter) |
The Nexperia PMBT5551,215 is a general-purpose NPN high-voltage transistor designed for surface mounting. It is housed in a compact SOT23 plastic package, making it suitable for space-constrained applications.
This transistor offers a maximum collector-emitter voltage (VCEO) of 160 V and a continuous collector current (IC) of up to 300 mA. Key electrical characteristics include a DC current gain (hFE) of at least 80 at 10mA/5V, and a collector-emitter saturation voltage (VCEsat) of a maximum of 200mV at 5mA/50mA.
With a transition frequency (fT) of 300 MHz, the PMBT5551,215 is suitable for various general-purpose applications. The device operates within a junction temperature range of -65°C to 150°C and has a total power dissipation of 250 mW at 25°C ambient temperature when mounted on an FR4 PCB.
Its surface mount capability and robust specifications make it a versatile component for electronic designs requiring a reliable NPN transistor with high voltage handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PMBT5551,215 is 160 V.
The maximum continuous collector current (IC) for the PMBT5551,215 is 300 mA.
The PMBT5551,215 is an NPN transistor.
The PMBT5551,215 is supplied in a TO-236-3, SC-59, SOT-23-3 package.
The operating temperature range (TJ) for the PMBT5551,215 is up to 150°C.
The power dissipation rating for the PMBT5551,215 is 250 mW at 25°C ambient temperature.