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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,014 pcs
|
3014 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
165 pcs
|
165 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Ambient Temperature | |
| Collector Capacitance | |
| Collector Current | |
| Collector-Base Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Cut-off Current | |
| Emitter-Base Voltage | |
| Frequency | |
| ICBO (Maximum @ VCB = 100 V; IE = 0 A; Tj = 25 °C) | |
| ICBO (Maximum @ VCB = 100 V; Tamb = 100 °C) | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Peak Base Current | |
| Peak Collector Current | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Thermal Resistance Junction-to-Ambient | |
| Total Power Dissipation | |
| Transistor Type | |
| VBEsat (Maximum @ IC = 10 mA; IB = 1 mA) | |
| VBEsat (Maximum @ IC = 50 mA; IB = 5 mA) | |
| VCEsat (Maximum @ IC = 10 mA; IB = 1 mA) | |
| VCEsat (Maximum @ IC = 50 mA; IB = 5 mA) | |
| Vce Saturation | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hFE (Minimum @ VCE = -5 V; IC = -1 mA) | |
| hFE (Minimum @ VCE = 5 V; IC = 10 mA; Tj = 25 °C) | |
| hFE (Minimum @ VCE = 5 V; IC = 50 mA; Tj = 25 °C) | |
| hfe (Minimum @ Ic=10 mA, Vce=5 V) |
The Nexperia PMBT5550,215 is an NPN high-voltage transistor housed in a compact SOT23 (TO-236AB) surface-mounted device plastic package. This component is suitable for general-purpose applications and offers a low collector current capability of up to 300 mA and a high collector-emitter voltage rating of 140 V.
Key electrical characteristics include a DC current gain (hFE) of at least 60 at 10mA and 5V. The device also specifies a collector-emitter saturation voltage (VCEsat) of a maximum of 250 mV at 50mA collector current and 5mA base current. Its collector capacitance is a maximum of 6 pF at 1 MHz.
With a total power dissipation of 250 mW at 25°C ambient temperature and a thermal resistance of 500 K/W, the PMBT5550,215 is designed for moderate power applications. The operating temperature range is from -65°C to 150°C (junction temperature).
This transistor is AEC-Q101 qualified, indicating its suitability for automotive and demanding industrial applications. The SOT23 package is ideal for space-constrained designs requiring surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PMBT5550,215 is 140 V.
The maximum continuous collector current (IC) for the PMBT5550,215 is 300 mA.
The PMBT5550,215 is an NPN transistor.
The PMBT5550,215 is supplied in a TO-236AB package, also known as SOT23.
The operating temperature range for the PMBT5550,215 is -65°C to 150°C.
The minimum DC current gain (hFE) at 10mA collector current and 5V collector-emitter voltage is 60.