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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,088,020 pcs
|
3088020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
185 pcs
|
185 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-04-28 22:15:17 |
| Category | |
| Manufacturer Name | |
| Ambient Temperature | |
| Collector-Base Breakdown Voltage | |
| Collector-Base Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cut-off Current | |
| Emitter-Base Breakdown Voltage | |
| Emitter-Base Voltage | |
| Frequency | |
| Frequency - Transition | |
| IC (Maximum) | |
| ICBO (Maximum @ VCB = 60 V; IE = 0 A; Tamb = 25 °C) | |
| ICBO (Maximum) | |
| Junction Temperature | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Peak Base Current | |
| Peak Collector Current | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Thermal Resistance | |
| Total Power Dissipation | |
| Transistor Type | |
| V(BR)CEO (Maximum) | |
| V(BR)CEO (Minimum @ IC = 1 mA; Tamb = 25 °C) | |
| VCE(sat) (Minimum @ VCE = 1 V; IC = 0.1 mA) | |
| VCE(sat) (Minimum @ VCE = 1 V; IC = 1 mA) | |
| VCE(sat) (Minimum @ VCE = 1 V; IC = 10 mA) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hFE (Minimum/Maximum @ VCE = 1 V; IC = 150 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C) |
The Nexperia PMBT4401,215 is an NPN switching transistor housed in a compact SOT-23 surface-mounted device (SMD) plastic package. This component is suitable for industrial and consumer switching applications, offering a high current capability of up to 600 mA and a low voltage rating of up to 40 V.
Key electrical characteristics include a DC current gain (hFE) ranging from 100 to 300 at 150 mA and 1 V, and a transition frequency (fT) of 250 MHz. The transistor has a maximum power dissipation of 250 mW at an ambient temperature of 25 °C and an operating junction temperature up to 150 °C.
Designed for surface mounting, the PMBT4401,215 utilizes the TO-236AB package, also known as SOT-23. Its AEC-Q101 qualification indicates suitability for automotive applications. The PNP complement to this transistor is the PMBT4403.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the PMBT4401,215 transistor is 600 mA.
The collector-emitter voltage rating for the PMBT4401,215 is 40 V.
The DC current gain (hFE) of the PMBT4401,215 is between 100 and 300 under the specified test conditions.
The maximum power dissipation for the PMBT4401,215 is 250 mW at an ambient temperature of 25 °C.
The operating temperature range for the PMBT4401,215 is -65 °C to 150 °C.
The PMBT4401,215 is supplied in a TO-236-3, SC-59, SOT-23-3 package.
Yes, the PMBT4401,215 is AEC-Q101 qualified.