| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,020 pcs
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7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PMBT3946YPN,125 is a versatile NPN/PNP general-purpose double transistor designed for efficient switching and amplification applications. Encased in a very small SOT-363 (SC-88) surface-mounted device plastic package, it contributes to board-space reduction.
This transistor features a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 200mA. The DC current gain (hFE) ranges from 100 to 300 under typical test conditions (VCE = 1V, IC = 10mA, Tamb = 25°C). It also has a maximum power dissipation of 350mW per device and operates within a junction temperature range of -55°C to 150°C.
The AEC-Q101 qualification indicates its suitability for demanding automotive applications. Its complementary NPN/NPN part is PMBT3904YS, and the PNP/PNP complement is PMBT3906YS.
Key electrical parameters include a collector-base voltage (VCBO) of up to 60V for the NPN transistor and -40V for the PNP transistor. The emitter-base voltage (VEBO) is rated at 6V. The transistor operates at frequencies up to 300MHz for the NPN and 250MHz for the PNP.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PMBT3946YPN,125 is 40V.
The maximum continuous collector current (IC) for the PMBT3946YPN,125 is 200mA.
The typical DC current gain (hFE) is 180 at 10mA collector current and 1V collector-emitter voltage.
The PMBT3946YPN,125 is supplied in a 6-TSSOP, SC-88, SOT-363 package.
The operating temperature range (TJ) for the PMBT3946YPN,125 is up to 150°C.