| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,120 pcs
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1120 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The PMBT3906,215 from Nexperia USA Inc. is a PNP bipolar junction transistor (BJT) suitable for general amplification and switching tasks. It is housed in a compact TO-236AB (SOT23) surface-mount package, making it ideal for space-constrained designs.
Key electrical specifications include a maximum collector-emitter voltage (Vceo) of -40V and a continuous collector current (Ic) of -200mA. The transistor offers a DC current gain (hFE) of at least 100 at 10mA and 1V. Its frequency response extends to 250MHz, allowing for use in various signal processing circuits.
This device operates with a total power dissipation of up to 250mW at an ambient temperature of 25°C. The junction temperature is rated up to 150°C, with storage and ambient temperature ranges also specified up to 150°C.
The PMBT3906,215 is mounted using a surface mount technique. Its complementary NPN type is the PMBT3904.
The collector-emitter voltage (Vceo) for the PMBT3906,215 is -40V.
The maximum continuous collector current (Ic) for the PMBT3906,215 is -200mA.
The PMBT3906,215 transistor has an operating frequency of 250MHz.
The PMBT3906,215 is supplied in a TO-236-3, SC-59, SOT-23-3 package.
The PMBT3906,215 transistor is designed for surface mount installation.
The maximum junction temperature for the PMBT3906,215 is 150°C.
The RoHS status is Compliant.