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7,020 pcs
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7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia USA Inc. PMBT2907,215 is a PNP bipolar junction transistor (BJT) suitable for switching and linear amplification applications. This component is housed in a compact SOT-23-3 surface-mount package.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 600mA. The transistor offers a typical DC current gain (hFE) of 100 at 150mA and 10V. Its transition frequency (fT) is 200MHz.
The device operates within a temperature range of -65°C to +150°C, with a maximum junction temperature of 150°C. Power dissipation is rated at 250mW at 25°C ambient temperature. The SOT-23-3 package is designed for surface mounting, making it suitable for automated assembly processes.
This transistor is an NPN complement to the PMBT2222 and PMBT2222A series, offering a robust solution for various electronic designs requiring PNP switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PMBT2907,215 is 40V.
The continuous collector current (IC) rating for the PMBT2907,215 is 600mA.
The PMBT2907,215 is supplied in a SOT-23-3 surface mount package.
The operating ambient temperature range for the PMBT2907,215 is -65°C to +150°C.
The DC current gain (hFE) is typically 100 at 150mA collector current and 10V collector-emitter voltage.
The transition frequency (fT) of the PMBT2907,215 is typically 200MHz.