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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,020 pcs
|
7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Capacitance | |
| Collector Current (DC) | |
| Collector-Base Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Capacitance | |
| Emitter-Base Cut-off Current | |
| Emitter-Base Voltage | |
| Frequency | |
| ICBO (Maximum @ IE = 0; VCB = -50 V) | |
| ICBO (Maximum @ IE = 0; VCB = -50 V; Tj = 125 °C) | |
| Junction Temperature | |
| Lead Style | |
| Mounting Type | |
| Operating Ambient Temperature | |
| Operating Temperature | |
| Peak Base Current | |
| Peak Collector Current | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Thermal Resistance Junction-to-Ambient | |
| Total Power Dissipation | |
| Transistor Type | |
| Transition Frequency | |
| VBEsat (Maximum @ IC = -150 mA; IB = -15 mA) | |
| VBEsat (Maximum @ IC = 500 mA, IB = 50 mA) | |
| VCEO (Maximum @ Open base) | |
| VCESat (Maximum @ IC = 150 mA, IB = 15 mA) | |
| Vce Saturation | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hFE (@ IC = 150 mA; VCE = 10 V) | |
| hFE (Minimum @ IC = -0.1 mA, VCE = -10 V) | |
| hFE (Minimum @ IC = 150 mA, VCE = 10 V) | |
| hFE (Minimum @ IC=1 mA, VCE=10 V) | |
| hFE (Minimum @ IC=500 mA, VCE=10 V) | |
| hfe (Minimum @ IC=10 mA, VCE=10 V) | |
| vcesat (Maximum @ IC = 500 mA, IB = 50 mA) |
The Nexperia USA Inc. PMBT2907,215 is a PNP bipolar junction transistor (BJT) suitable for switching and linear amplification applications. This component is housed in a compact SOT-23-3 surface-mount package.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 600mA. The transistor offers a typical DC current gain (hFE) of 100 at 150mA and 10V. Its transition frequency (fT) is 200MHz.
The device operates within a temperature range of -65°C to +150°C, with a maximum junction temperature of 150°C. Power dissipation is rated at 250mW at 25°C ambient temperature. The SOT-23-3 package is designed for surface mounting, making it suitable for automated assembly processes.
This transistor is an NPN complement to the PMBT2222 and PMBT2222A series, offering a robust solution for various electronic designs requiring PNP switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PMBT2907,215 is 40V.
The continuous collector current (IC) rating for the PMBT2907,215 is 600mA.
The PMBT2907,215 is supplied in a SOT-23-3 surface mount package.
The operating ambient temperature range for the PMBT2907,215 is -65°C to +150°C.
The DC current gain (hFE) is typically 100 at 150mA collector current and 10V collector-emitter voltage.
The transition frequency (fT) of the PMBT2907,215 is typically 200MHz.